Dual N Channel MOSFET Load Switch with Common Drain Configuration and ESD Protection JSCJ CJBE5005 Low Gate Charge
Key Attributes
Model Number:
CJBE5005
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.3mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
200pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.7nF@10V
Pd - Power Dissipation:
-
Gate Charge(Qg):
17nC@4.5V
Mfr. Part #:
CJBE5005
Package:
DFNWB-8(3x3)
Product Description
Product Description
The CJBE5005 is a Dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration. Its applications include load switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: DFNWB3X3-8L-K
- Material: Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =4.5V, VDS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =5A | 8.0 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =4.0V, ID =5A | 8.2 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =3.8V, ID =5A | 8.5 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =3.1V, ID =5A | 9.7 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =5A | 11.5 | m | ||
| Forward tranconductance | gFS | VDS =5V, ID =7A | 9 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 9.3 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 230 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 200 | pF | ||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =7A | 17 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =7A | 1.5 | nC | ||
| Gate-drain charge | Qg d | VDS =10V,VGS =4.5V,ID =7A | 4.7 | nC | ||
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 2.5 | ns | ||
| Turn-on rise time | tr | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 7.2 | ns | ||
| Turn-off delay time | td(off) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 49 | ns | ||
| Turn-off fall time | tf | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 108 | ns |
2411121115_JSCJ-CJBE5005_C504186.pdf
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