Surface Mount P Channel Enhancement Mode Power MOSFET JSMSEMI JSM6435 with Load Switching Capability
Key Attributes
Model Number:
JSM6435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
34A
RDS(on):
20mΩ@5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
155pF
Number:
1 P-Channel
Output Capacitance(Coss):
240pF
Input Capacitance(Ciss):
1.4nF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
JSM6435
Package:
DFN-8(5x6)
Product Description
Product Overview
The JSM6435 is a P-Channel Enhancement Mode Power MOSFET designed for various electronic applications. It features a Tower MOSFET structure, lead-free compliance, and a surface mount package. This product is suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JSM
- Origin: China
- Material: Lead-free
- Package: PDFN5X6-8L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | TA=25C unless otherwise noted | ||
| Gate-Source Voltage | VGS | 25 | V | |||
| Power Dissipation | PDSM | 3.4 | W | TA=70C | ||
| Power Dissipation | PD | 64 | W | TC=25C | ||
| Avalanche energy | EAS | 31 | mJ | L=0.1mH | ||
| Avalanche Current | IAS | -12 | A | Steady-State | ||
| Continuous Drain Current | ID | -34 | A | Steady-State | ||
| Pulsed Drain Current | IDM | -95 | A | t 10s | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Case | RJC | 4.1 | C/W | TC=25C | ||
| Maximum Junction-to-Case | RJC | 12.5 | C/W | TC=100C | ||
| Maximum Junction-to-Ambient | RJA | 24 | C/W | TA=25C | ||
| Maximum Junction-to-Ambient | RJA | 53 | C/W | TA=70C | ||
| Electrical Characteristics (TJ=25C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250A, VGS=0V | ||
| Gate Threshold Voltage | VGS(th) | -1.7 | -2.3 | -3 | V | VDS=VGS, ID=-250A |
| Static Drain-Source On-Resistance | RDS(ON)MAX | 0.012 | 0.020 | VGS=-10V, ID=-34A; VGS=-5.0V, ID=-21.5A | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-30V, VGS=0V | ||
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=25V | ||
| Forward Transconductance | gFS | 28 | S | VDS=-5V, ID=-20A | ||
| Body-Diode Forward Voltage | VSD | -0.73 | -1 | V | IS=-20A, VGS=0V | |
| Maximum Body-Diode Continuous Current | IS | -35 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | 1130 | 1400 | pF | VGS=0V, VDS=-15V, f=1MHz | |
| Output Capacitance | Coss | 240 | pF | VGS=0V, VDS=-15V, f=1MHz | ||
| Reverse Transfer Capacitance | Crss | 155 | pF | VGS=0V, VDS=-15V, f=1MHz | ||
| Gate resistance | Rg | 5.8 | 8 | VGS=0V, VDS=0V, f=1MHz | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg(10V) | 21 | nC | VGS=-10V, VDS=-15V, ID=-20A | ||
| Total Gate Charge | Qg(4.5V) | 10 | nC | VGS=-4.5V, VDS=-15V, ID=-20A | ||
| Gate Source Charge | Qgs | 4 | nC | |||
| Gate Drain Charge | Qgd | 6 | nC | |||
| Turn-On DelayTime | tD(on) | 10 | ns | |||
| Turn-On Rise Time | tr | 8 | ns | |||
| Turn-Off DelayTime | tD(off) | 15 | ns | |||
| Turn-Off Fall Time | tf | 7 | ns | |||
| Body Diode Reverse Recovery Time | trr | 13.5 | ns | IF=-20A, dI/dt=500A/s | ||
| Body Diode Reverse Recovery Charge | Qrr | 29 | nC | IF=-20A, dI/dt=500A/s | ||
2111121930_JSMSEMI-JSM6435_C2874728.pdf
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