Surface Mount Dual N Channel MOSFETs JSCJ CJL2013 SOT 23 6L Package for Power Management Applications
Key Attributes
Model Number:
CJL2013
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14.9mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 N-channel
Input Capacitance(Ciss):
935pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
16nC@4.5V
Mfr. Part #:
CJL2013
Package:
SOT-23-6L
Product Description
Product Overview
The JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Dual N-Channel MOSFETs are designed for high-performance applications. Featuring TrenchFET technology, these devices offer excellent RDS(on), low gate charge, and high power and current handling capabilities in a surface mount package. They are ideal for battery protection, load switching, and power management.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23-6L
- Material: Plastic-Encapsulate
- Type: Dual N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | 6 | A | |||
| Pulsed Drain Current | IDM | (note 1) | 25 | A | ||
| Thermal Resistance from Junction to Ambient | RθJA | (note 2) | 83.3 | ℃/W | ||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | ~+150 | ℃ | ||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | 260 | ℃ | ||
| STATIC CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | (note 3) VDS =VGS, ID =250µA | 0.7 | 1.0 | V | |
| Drain-source on-resistance | RDS(on) | (note 3) VGS =4.5V, ID =3A | 12.2 | 14.0 | m℆ | |
| Drain-source on-resistance | RDS(on) | (note 3) VGS =2.5V, ID =3A | 13.3 | 14.9 | m℆ | |
| Drain-source on-resistance | RDS(on) | (note 3) VGS =3.8V, ID =3A | 11.4 | 12.0 | m℆ | |
| Drain-source on-resistance | RDS(on) | (note 3) VGS =3.1V, ID =3A | 12.9 | 13.6 | m℆ | |
| Forward tranconductance | gFS | (note 3) VDS =5V, ID =4.5A | 10.5 | S | ||
| Diode forward voltage | VSD | (note 3) IS=1.25A, VGS = 0V | 1.2 | V | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | (note4) VDS =8V,VGS =0V,f =1MHz | 935 | pF | ||
| Output Capacitance | Coss | (note4) VDS =8V,VGS =0V,f =1MHz | 170 | pF | ||
| Reverse Transfer Capacitance | Crss | (note4) VDS =8V,VGS =0V,f =1MHz | 145 | pF | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-on delay time | td(on) | (note 4) VDD=10V,VGS=4V, ID=1A,RGEN=10℆ | 16 | ns | ||
| Turn-on rise time | tr | (note 4) VDD=10V,VGS=4V, ID=1A,RGEN=10℆ | 8 | ns | ||
| Turn-off delay time | td(off) | (note 4) VDD=10V,VGS=4V, ID=1A,RGEN=10℆ | 48 | ns | ||
| Turn-off fall time | tf | (note 4) VDD=10V,VGS=4V, ID=1A,RGEN=10℆ | 14 | ns | ||
| Total Gate Charge | Qg | (note 4) VDS =10V,VGS =4.5V,ID=4A | 16 | nC | ||
| Gate-Source Charge | Qgs | (note 4) VDS =10V,VGS =4.5V,ID=4A | 1.3 | nC | ||
| Gate-Drain Charge | Qg d | (note 4) VDS =10V,VGS =4.5V,ID=4A | 1.8 | nC | ||
2410121742_JSCJ-CJL2013_C504150.pdf
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