Low Logic Level Gate Drive MOSFET N Channel JSCJ CJBA3144K DFN1006 3L Package for Power Switching
Key Attributes
Model Number:
CJBA3144K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
600mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.7pF
Number:
1 N-channel
Input Capacitance(Ciss):
42pF
Output Capacitance(Coss):
9pF
Pd - Power Dissipation:
275mW
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
CJBA3144K
Package:
DFN1006-3L
Product Description
DFN1006-3L Plastic-Encapsulate MOSFETs CJBA3144K N-Channel MOSFET
The CJBA3144K is an N-Channel MOSFET in a DFN1006-3L package, designed for surface mounting. It features low RDS(on) and operates at low logic level gate drive, with ESD protected gate. This product is lead-free and suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifting.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Product Code: CJBA3144K
- Package: DFN1006-3L
- Channel Type: N-Channel
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 0.6 | A | |||
| Pulsed Drain Current | IDM | 2.4 | A | |||
| Power Dissipation | PD | TA=25 | 275 | mW | ||
| Thermal Resistance Junction to Ambient | RθJA | 455 | °C/W | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | +150 | °C | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1.0 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±10V | ±3 | µA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.5 | 0.95 | 1.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =0.6A | 290 | mΩ | ||
| VGS =2.5V, ID =0.3A | 360 | mΩ | ||||
| Input capacitance | Ciss | VDS =10V,VGS =0V, f =1MHz | 42 | pF | ||
| Output capacitance | Coss | 9 | ||||
| Reverse transfer capacitance | Crss | 4.7 | ||||
| Total gate charge | Qg | VGS=4.5V, VDD=15V, ID=0.6A | 13.8 | nC | ||
| Gate-source charge | Qgs | 2.1 | nC | |||
| Gate-drain charge | Qgd | 2.9 | nC | |||
| Turn-on delay time | td(on) | VDD=15V, VGS=6.5V, ID=0.7A , Rg=51Ω | 0.4 | ns | ||
| Turn-on rise time | tr | 0.2 | ||||
| Turn-off delay time | td(off) | 0.5 | ||||
| Turn-off fall time | tf | 0.2 | ||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=0.15A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 0.6 | A | |||
| Pulsed drain-source diode forward current | ISM | 2.4 | A |
2504101957_JSCJ-CJBA3144K_C47089425.pdf
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