P Channel MOSFET for Surface Mount Applications Low RDS on JSCJ CJBB3139K DFN1006 3L A Package Device
Key Attributes
Model Number:
CJBB3139K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-
RDS(on):
520mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Input Capacitance(Ciss):
113pF
Pd - Power Dissipation:
100mW
Mfr. Part #:
CJBB3139K
Package:
DFN-3L(1x0.6)
Product Description
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L-A Plastic-Encapsulate MOSFETs CJBB3139K P-Channel MOSFET
The CJBB3139K is a P-Channel MOSFET in a DFN1006-3L-A package, designed for surface mounting. It features low RDS(on), operates at low logic level gate drive, and includes ESD protection on the gate. This product is lead-free and suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifting.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Type: P-Channel MOSFET
- Package: DFN1006-3L-A
- Certifications: Lead Free Product is Acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current (note 1) | ID | -0.66 | A | |||
| Pulsed Drain Current (tp=10us) | IDM | -1.2 | A | |||
| Power Dissipation (note 1) | PD | 100 | mW | |||
| Thermal Resistance from Junction to Ambient (note 1) | RJA | 1250 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | 150 | |||
| Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | TL | 260 | ||||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-20V,VGS = 0V | -1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±20 | µA | ||
| Gate threshold voltage (note 2) | VGS(th) | VDS =VGS, ID =-250µA | -0.35 | -1.1 | V | |
| Drain-source on-resistance(note 2) | RDS(on) | VGS =-4.5V, ID =-1A | 520 | mΩ | ||
| VGS =-2.5V, ID =-0.8A | 780 | mΩ | ||||
| VGS =-1.8V, ID =-0.5A | 950 | mΩ | ||||
| Forward tranconductance(note 2) | gFS | VDS =-10V, ID =-0.54A | 1.2 | S | ||
| Diode forward voltage | VSD | IS = -0.5A, VGS = 0V | -0.61 | V | ||
| DYNAMIC PARAMETERS (note 4) | ||||||
| Input Capacitance | Ciss | VDS =-16V,VGS =0V,f =1MHz | 113 | pF | ||
| Output Capacitance | Coss | 15 | pF | |||
| Reverse Transfer Capacitance | Crss | 9 | pF | |||
| SWITCHING PARAMETERS (note 4) | ||||||
| Turn-on delay time (note 3) | td(on) | VDD=-4.5V,VGS=-10V, ID=-200mA,RGEN=10Ω | 9 | ns | ||
| Turn-on rise time (note 3) | tr | 5.7 | ns | |||
| Turn-off delay time (note 3) | td(off) | 32.6 | ns | |||
| Turn-off fall time (note 3) | tf | 20.3 | ns | |||
2410121848_JSCJ-CJBB3139K_C504103.pdf
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