Power MOSFET JSCJ CJAC110SN10L Featuring Ultra Low RDS ON and High Energy Avalanche Capability EAS
Key Attributes
Model Number:
CJAC110SN10L
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
11pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
130W
Input Capacitance(Ciss):
3.366nF@50V
Gate Charge(Qg):
156nC@15V
Mfr. Part #:
CJAC110SN10L
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC110SN10L is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capability, high density cell design for ultra-low RDS(ON), good stability with high EAS, and an excellent package for heat dissipation. This MOSFET is suitable for SMPS, general purpose applications, hard switched and high frequency circuits, uninterruptible power supplies, and power management.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC110SN10L
- Marking: CJAC110SN10L
- Package: PDFNWB56-8L
- Material: Plastic-Encapsulate
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 110 | A | ||
| Pulsed Drain Current | IDM | 390 | A | |||
| Single Pulsed Avalanche Energy | EAS | 400 | mJ | |||
| Power Dissipation | PD | Ta=25 | 0.96 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 130 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =250uA | 100 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.5 | V | ||
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 4.3 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =20A | 6.0 | m | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =50V,VGS =0V, f =100KHz | 3366 | pF | ||
| Output capacitance | Coss | 657 | ||||
| Reverse transfer capacitance | Crss | 11 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=15V, VDS=50V, ID=20A | 78 | nC | ||
| Gate-source charge | Qgs | 13 | ||||
| Gate-drain charge | Qgd | 16 | ||||
| Turn-on delay time | td(on) | VDS=50V,ID=5A , VGS=10V,RG=2.7 | 3.0 | ns | ||
| Turn-on rise time | tr | 8.2 | ||||
| Turn-off delay time | td(off) | 26 | ||||
| Turn-off fall time | tf | 318 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=25A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 110 | A | |||
| Pulsed drain-source diode forward current | ISM | 390 | A | |||
| Other Electrical Characteristics | ||||||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1.0 | µA | ||
| Gate resistance | Rg | 6.0 | ||||
2410121917_JSCJ-CJAC110SN10L_C5144559.pdf
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