JSMSEMI AM20N06 90D T1 PF JSM 60V N Channel MOSFET designed for power switching and heat dissipation
Key Attributes
Model Number:
AM20N06-90D-T1-PF-JSM
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
36mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
45.3pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.15nF@25V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
AM20N06-90D-T1-PF-JSM
Package:
TO-252
Product Description
Product Overview
The AM20N06-90D-T1-PF is a 60V N-Channel MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide variety of applications. Key features include low gate charge, advanced high cell density trench technology for ultra RDS(ON), and an excellent package for good heat dissipation. A green device option is available.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: AM20N06-90D-T1-PF
- Type: N-Channel MOSFET
- Certifications: Green device available
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current-TC=25 | 30 | A | |||
| ID | Continuous Drain Current-TC=100 | 17.7 | A | |||
| IDM | Pulsed Drain Current | note1 | A | |||
| EAS | Single Pulse Avalanche Energy | note2 | 100 | mJ | ||
| PD | Power Dissipation,TC=25 | 50 | W | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | +175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 3 | /W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 60 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VGS=0V, VDS=60V | 1 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0A | ±100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate-Source Threshold Voltage | VGS=VDS, ID=250µA | 1 | 2 | 3 | V |
| RDS(ON) | Drain-Source On Resistance | VGS=10V, ID=8A | 26 | 30 | mΩ | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=30V, VGS=0V, f=1MHz | 1890 | pF | ||
| Coss | Output Capacitance | 168 | pF | |||
| Crss | Reverse Transfer Capacitance | 132 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD=30V, ID=1A, VGS=10V, RGEN=3.3Ω | 7 | ns | ||
| tr | Rise Time | 3 | ns | |||
| td(off) | Turn-Off Delay Time | 19.2 | ns | |||
| tf | Fall Time | 3.2 | ns | |||
| Qg | Total Gate Charge | VGS=10V, VDS=48V, ID=10A | 49 | nC | ||
| Qgs | Gate-Source Charge | 8 | nC | |||
| Qgd | Gate-Drain Miller Charge | 16 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| VSD | Source-Drain Diode Forward Voltage | VGS=0V, IS=10A | 1.2 | V | ||
| trr | Reverse Recovery Time | 35 | ns | |||
| qrr | Reverse Recovery Charge | 43 | nC | |||
| ISM | Maximum Continuous Drain to Source Diode Forward Current | note3 | 80 | A | ||
2307141056_JSMSEMI-AM20N06-90D-T1-PF-JSM_C7462821.pdf
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