N Channel Power MOSFET JSCJ CJAB3R9SN04C with Low On State Resistance and High Pulsed Drain Current
Key Attributes
Model Number:
CJAB3R9SN04C
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
1.2nF
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
CJAB3R9SN04C
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB3R9SN04C is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology is optimized for minimal on-state resistance, superior switching performance, and robust high-energy pulse handling in avalanche and commutation modes. It is well-suited for high-efficiency, fast-switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB3R9SN04C
- Marking: CJAB3R9SN04C
- Package: PDFNWB3.33.3-8L
- Material: Plastic-Encapsulate MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS (TJ=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25 | 70 | A | ||
| Pulsed Drain Current | IDM | 280 | A | |||
| Single Pulsed Avalanche Energy | EAS | VDD=20V,VGS=10V, L=0.5mH,Rg=25 Starting TJ= 25. | 140 | mJ | ||
| Power Dissipation | PD | TC=25 | 50 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 2.5 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (TJ=25 unless otherwise specified) | ||||||
| Off characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =1mA | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =32V, VGS =0V | 3.9 | A | ||
| TJ =25 | 1.0 | A | ||||
| TJ =125 | 100 | A | ||||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.7 | 2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =20A | 3.0 | m | ||
| VGS =4.5V, ID =20A | 4.3 | m | ||||
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | VDS =20V,VGS =0V, f =1MHz | 1200 | pF | ||
| Output capacitance | Coss | 430 | pF | |||
| Reverse transfer capacitance | Crss | 16 | pF | |||
| Switching characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=20V, ID=35A | 20 | nC | ||
| Gate-source charge | Qgs | 5.2 | nC | |||
| Gate-drain charge | Qgd | 4.3 | nC | |||
| Turn-on delay time | td(on) | VDS=20V, VGS=10V, RL=1 , Rg=4.8 | 3.2 | ns | ||
| Turn-on rise time | tr | 4.3 | ns | |||
| Turn-off delay time | td(off) | 9.5 | ns | |||
| Turn-off fall time | tf | 6.5 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 70 | A | |||
| Pulsed drain-source diode forward current | ISM | 280 | A | |||
| Reverse recovery time | trr | diS/dt = 100A/s, IS = 30A, VDD = 30V | 47 | ns | ||
| Reverse recovery charge | Qrr | 42 | nC | |||
2410121929_JSCJ-CJAB3R9SN04C_C19268995.pdf
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