Dual Transistor NPN NPN JTD JTDMMDT4401DW SOT363 Package Suitable for Amplification Switching
Key Attributes
Model Number:
JTDMMDT4401DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
JTDMMDT4401DW
Package:
SOT-363
Product Description
Product Overview
The MMDT4401DW is a Dual Transistor (NPN+NPN) featuring epitaxial planar die construction. It is ideal for low power amplification and switching applications.
Product Attributes
- Brand: JTD
- Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Units |
| Collector-Base Voltage | VCBO | 60 | V | ||
| Collector-Emitter Voltage | VCEO | 40 | V | ||
| Emitter-Base Voltage | VEBO | 6 | V | ||
| Collector Current -Continuous | IC | 0.6 | A | ||
| Collector Power Dissipation | PC | 0.2 | W | ||
| Junction Temperature | TJ | 150 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC= 100 A, IE=0 | 60 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100 A, IC=0 | 6 | V | |
| Collector cut-off current | ICBO | VCB= 50 V , IE=0 | 0.1 | A | |
| Collector cut-off current | ICEO | VCE= 35 V , IB=0 | 0.5 | A | |
| Emitter cut-off current | IEBO | VEB=5V , IC=0 | 0.1 | A | |
| DC current gain | hFE(1) | VCE=1V, IC= 0.1mA | 20 | ||
| DC current gain | hFE(2) | VCE=1V, IC= 1mA | 40 | ||
| DC current gain | hFE(3) | VCE=1V, IC= 10mA | 80 | ||
| DC current gain | hFE(4) | VCE=1V, IC= 150mA | 100 | 300 | |
| DC current gain | hFE(5) | VCE=2V, IC= 500mA | 40 | ||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=150 mA, IB= 15mA | 0.4 | V | |
| Collector-emitter saturation voltage | VCE(sat)2 | IC=500 mA, IB= 50mA | 0.75 | V | |
| Base-emitter saturation voltage | VBE(sat)1 | IC= 150 mA, IB= 15mA | 0.75 | 0.95 | V |
| Base-emitter saturation voltage | VBE(sat)2 | IC= 500 mA, IB= 50mA | 1.2 | V | |
| Transition frequency | fT | VCE=10V,IC= 20mA,f=100MHz | 250 | MHz | |
| Output capacitance | Cob | VCB=5V, IE= 0,f=1MHz | 6.5 | pF | |
| Delay time | td | 15 | nS | ||
| Rise time | tr | VCC=30V, VBE=2V,IC=150mA ,IB1=15mA | 20 | nS | |
| Storage time | tS | 225 | nS | ||
| Fall time | tf | VCC=30V, IC=150mA,IB1=-IB2=15mA | 30 | nS |
2504101957_JTD-JTDMMDT4401DW_C42443492.pdf
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