Dual N Channel MOSFET JSCJ CJL8810A Featuring Low Gate Charge and ESD Protection for Load Switching
Key Attributes
Model Number:
CJL8810A
Product Custom Attributes
Configuration:
Common Drain
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
35mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
2 N-Channel
Output Capacitance(Coss):
137pF
Input Capacitance(Ciss):
785pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
7.7nC@4.5V
Mfr. Part #:
CJL8810A
Package:
SOT-23-6L
Product Description
Product Overview
The CJL8810A is a Dual N-Channel MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration. This device is ideal for various load switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Device Code: L8810A
- Package: SOT-23-6L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | Notes |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS =16V,VGS = 0V | 1 | A | |||
| Gate-Body Leakage Current | IGSS | VGS =4.5V, VDS = 0V | 1 | A | |||
| Gate-Body Leakage Current | IGSS | VGS =10V, VDS = 0V | 5 | A | |||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1 | V | ||
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =3A | 10.0 | 15.5 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =3A | 10.5 | 16.6 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS =3.8V, ID =3A | 10.8 | 17.0 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS =2.5V, ID =3A | 12.0 | 19.5 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS =1.8V, ID =3A | 16.0 | 35.0 | m | ||
| Forward Transconductance | gFS | VDS =5V, ID =7A | 9 | S | |||
| Diode Forward Voltage | VSD | IS=1A, VGS = 0V | 1 | V | |||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 785 | pF | |||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 137 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 100 | pF | |||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID =7A | 7.7 | nC | |||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID =7A | 1.2 | nC | |||
| Gate-Drain Charge | Qgd | VDS =10V,VGS =4.5V,ID =7A | 2.4 | nC | |||
| Turn-on Delay Time | td(on) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 8.8 | ns | |||
| Turn-on Rise Time | tr | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 2.2 | ns | |||
| Turn-off Delay Time | td(off) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 65 | ns | |||
| Turn-off Fall Time | tf | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 26 | ns | |||
| Continuous Drain Current | ID | Ta=25 | 7 | A | |||
| Pulsed Drain Current | IDM | Ta=25 | 30 | A | *Repetitive ratingPluse width limited by junction temperature. | ||
| Thermal Resistance Junction to Ambient | RJA | 100 | /W | ||||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | ||||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | 260 | ||||
| Power Dissipation | PD | Ta=25 | 1.25 | W | 3 |
2504101957_JSCJ-CJL8810A_C47089406.pdf
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