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quality General Purpose NPN Transistor JUXING MMBT3904 in SOT23 Package Suitable for Electronic Applications factory
quality General Purpose NPN Transistor JUXING MMBT3904 in SOT23 Package Suitable for Electronic Applications factory

General Purpose NPN Transistor JUXING MMBT3904 in SOT23 Package Suitable for Electronic Applications

Key Attributes
Model Number: MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description

MMBT3904 NPN Transistor - SOT-23 Package

The MMBT3904 is an NPN epitaxial planar die construction transistor in a SOT-23 package. It is designed for general-purpose applications and is recommended as a complementary type to the PNP transistor MMBT3906. The device offers reliable performance with its robust construction.

Product Attributes

  • Marking: 1AM
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Max Units
Maximum Ratings
Collector-Base Voltage VCBO (TA=25 unless otherwise noted) 60 V
Collector-Emitter Voltage VCEO (TA=25 unless otherwise noted) 40 V
Emitter-Base Voltage VEBO (TA=25 unless otherwise noted) 6 V
Collector Current -Continuous IC (TA=25 unless otherwise noted) 200 mA
Total Device Dissipation PC (TA=25 unless otherwise noted) 200 mW
Junction Temperature TJ (TA=25 unless otherwise noted) 150
Storage Temperature Tstg (TA=25 unless otherwise noted) -55 +150
Electrical Characteristics
Collector-base breakdown voltage VCBO IC= 10A, IE=0 60 V
Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 40 V
Emitter-base breakdown voltage VEBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Collector cut-off current ICEX VCE=30V,VBE(off)=3V 50 nA
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE(1) VCE=1V, IC=10mA 100 400
DC current gain hFE(2) VCE=1V, IC= 50mA 60
DC current gain hFE(3) VCE=1V, IC= 100mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V
Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz 300 MHz
Delay Time td VCC=3V,VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA 35 nS
Rise Time tr VCC=3V,VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA 35 nS
Storage Time ts VCC=3.0V,IC=10mAdc IB1=-IB2=1mA 200 nS
Fall Time tf VCC=3.0V,IC=10mAdc IB1=-IB2=1mA 50 nS

hFE(1) Classification

Rank Range
O 100-200
Y 200-300
G 300-400

SOT-23 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e
e1 1.800 2.000 0.071 0.079
L
L1 0.300 0.500 0.012 0.020
0 8 0 8
0.550 REF 0.022 REF
0.950 TYP 0.037 TYP

2410121531_JUXING-MMBT3904_C3011091.pdf

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