N Channel MOSFET JSCJ CJ4153 Featuring Low Threshold Voltage and ESD Protected Gate for Electronics
Key Attributes
Model Number:
CJ4153
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
915mA
RDS(on):
570mΩ@4.5V,600mA
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Input Capacitance(Ciss):
110pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.82nC
Mfr. Part #:
CJ4153
Package:
SOT-523
Product Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD CJ4153 N-Channel MOSFET
The CJ4153 is an N-Channel MOSFET in a SOT-523 package designed for various electronic applications. It features low RDS(on) for improved system efficiency, a low threshold voltage of 1.5V, and ESD protected gate. This Pb-Free package is suitable for load/power switches, power supply converter circuits, battery management, and portable devices such as cell phones, PDAs, and digital cameras.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJ4153
- Package Type: SOT-523
- Channel Type: N-Channel
- Material: Plastic-Encapsulated
- Certifications: Pb-Free Packages Available
- Origin: China (implied by manufacturer name and website)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 6 | V | |||
| Continuous Drain Current (Note 1) | ID | 0.915 | A | |||
| Power Dissipation (Note 1) | PD | 150 | mW | |||
| Thermal Resistance Junction to Ambient (Note 1) | RJA | 833 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| OFF Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Gate-source leakage | IGSS | VDS =0V, VGS =4.5V | 1 | A | ||
| Zero gate voltage drain current | IDSS | VDS =16V, VGS =0V | 100 | nA | ||
| ON Characteristics (Note 2) | ||||||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.45 | 1.1 | V | |
| Drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =600mA | 570 | m | ||
| VGS =2.5V, ID =500mA | 620 | m | ||||
| VGS =1.8V, ID =350mA | 700 | m | ||||
| VGS =1.5V, ID =40mA | 9500 | m | ||||
| Forward transconductance | gfs | VDS =10V, ID =400mA | 0.5 | S | ||
| Charges and Capacitances (Note 3) | ||||||
| Input Capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 110 | p F | ||
| Output Capacitance | Coss | 12 | p F | |||
| Reverse Transfer Capacitance | Crss | p F | ||||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V, ID =200mA | 1.82 | nC | ||
| Gate-Source Charge | Qgs | 0.3 | nC | |||
| Gate-Drain Charge | Qg d | 0.42 | nC | |||
| Switching Characteristics (Note 3, 4) | ||||||
| Turn-on delay time | td(on) | VDD=10V, VGS=4.5V RG=10, ID =200mA | 3.7 | ns | ||
| Rise time | tr | 4.4 | ns | |||
| Turn-off delay time | td(off) | 25 | ns | |||
| Fall time | tf | 7.6 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Body diode voltage | VSD | IS=0.2A, VGS =0V | 1.1 | V | ||
2410121456_JSCJ-CJ4153_C62631.pdf
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