High voltage N Channel MOSFET JSCJ CJU30N10 designed for pulsed avalanche energy and power switching
Key Attributes
Model Number:
CJU30N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
24mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
216pF
Number:
1 N-channel
Output Capacitance(Coss):
236pF
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
4.93nF
Gate Charge(Qg):
124nC@10V
Mfr. Part #:
CJU30N10
Package:
TO-252-2L
Product Description
Product Description
This advanced high voltage N-Channel Power MOSFET is designed for efficient switching in high-speed applications and can withstand high energy in the avalanche mode. It features a fast recovery time for its drain-to-source diode. Ideal for power supplies, converters, power motor controls, and bridge circuits.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: CJU30N10
- Marking: U30N10
- Package: TO-252-2L
- Material: Plastic-Encapsulate MOSFETS
- Color: Green molding compound device (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 30 | A | |||
| Pulsed Drain Current | IDM | 120 | A | |||
| Single Pulsed Avalanche Energy | EAS | 100 | mJ | |||
| Thermal Resistance Junction to Ambient | RθJA | 156 | °C/W | |||
| Thermal Resistance Junction to Case | RθJC | 1.47 | °C/W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | °C | ||
| Maximum Power Dissipation | PD | 85 | W | |||
| OFF CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 100 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1 | µA | ||
| TJ =25°C | 100 | µA | ||||
| TJ =125°C | 2.3 | µA | ||||
| ON CHARACTERISTICS | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.3 | 2.0 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =15A | 24 | mΩ | ||
| Forward transconductance | gFS | VDS =5V, ID =10A | 15 | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 4930 | pF | ||
| Output capacitance | Coss | 236 | ||||
| Reverse transfer capacitance | Crss | 216 | ||||
| SWITCHING CHARACTERISTICS | ||||||
| Total gate charge | Qg | VDS=50V,VGS=10V, ID=10A | 62 | nC | ||
| Gate-source charge | Qgs | 6.2 | ||||
| Gate-drain charge | Qg d | 15 | ||||
| Turn-on delay time | td(on) | VDS=30V, VGS=10V,ID=2A, RG=3Ω , RL=5Ω | 7 | ns | ||
| Turn-on rise time | tr | 29 | ||||
| Turn-off delay time | td(off) | 12 | ||||
| Turn-off fall time | tf | 30 | ||||
| DRAIN-SOURCE DIODE CHARACTERISTICS | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=40A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 30 | A | |||
| Pulsed drain-source diode forward current | ISM | 120 | A | |||
2410121845_JSCJ-CJU30N10_C3031908.pdf
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