Power Switching N Channel MOSFET JSCJ CJU15SN10 Featuring Low RDS ON and Excellent Heat Dissipation
Key Attributes
Model Number:
CJU15SN10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
75mΩ@10V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
179pF
Input Capacitance(Ciss):
293pF
Pd - Power Dissipation:
41.7W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
CJU15SN10
Package:
TO-252-2L
Product Description
Product Overview
The CJU15SN10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include an excellent package for heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Product Code: CJU15SN10
- Material: Plastic-Encapsulate MOSFETS
- Package Type: TO-252-2L
- Marking: U15SN10 = Device code. Solid dot = Green molding compound device, if none, the normal device. XXXX = Code.
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 15 | A | |||
| Pulsed Drain Current | IDM | 60 | A | |||
| Single Pulsed Avalanche Energy | EAS | 10 | mJ | |||
| Power Dissipation | PD | 41.7 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 40 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 3.0 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| MOSFET ELECTRICAL CHARACTERISTICS (TJ =25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =100V, VGS =0V | 1.0 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.65 | 3.0 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =5A | 50.6 | m | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =3A | 59.5 | m | ||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f = 1MHz | 293 | pF | ||
| Output capacitance | Coss | VDS =25V,VGS =0V, f = 1MHz | 179 | pF | ||
| Reverse transfer capacitance | Crss | VDS =25V,VGS =0V, f = 1MHz | 14 | pF | ||
| Total gate charge | Qg | VGS=10V, VDS=30V, ID=10A | 5.9 | nC | ||
| Gate-source charge | Qgs | VGS=10V, VDS=30V, ID=10A | 0.7 | nC | ||
| Gate-drain charge | Qg d | VGS=10V, VDS=30V, ID=10A | 1.6 | nC | ||
| Turn-on delay time | td(on) | VDD=30V,RL=5, VGS=10V,RG=1.0 f = 100KHz | 12.4 | ns | ||
| Turn-on rise time | tr | VDD=30V,RL=5, VGS=10V,RG=1.0 f = 100KHz | 6.6 | ns | ||
| Turn-off delay time | td(off) | VDD=30V,RL=5, VGS=10V,RG=1.0 f = 100KHz | 54.4 | ns | ||
| Turn-off fall time | tf | VDD=30V,RL=5, VGS=10V,RG=1.0 f = 100KHz | 26.4 | ns | ||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 15 | A | |||
| Pulsed drain-source diode forward current | ISM | 60 | A | |||
2410121929_JSCJ-CJU15SN10_C19269034.pdf
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