Compact SOT-23-6L Plastic Encapsulate Dual N Channel MOSFET JSCJ CJL2016 for Power Management Systems
Key Attributes
Model Number:
CJL2016
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
2 N-Channel
Input Capacitance(Ciss):
800pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
CJL2016
Package:
SOT-23-6L
Product Description
Product Overview
The JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETs Dual N-Channel MOSFET is a high-performance power MOSFET designed for various applications. It features a TrenchFET Power MOSFET structure, offering excellent RDS(on), low gate charge, and high power and current handling capabilities in a compact SOT-23-6L surface mount package. Ideal for battery protection, load switches, and power management systems.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by company name)
- Package: SOT-23-6L Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =18V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.7 | V | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | 15.7 | m | ||
| VGS =2.5V, ID =3A | 20 | m | ||||
| VGS =3.8V, ID =3A | 16.4 | m | ||||
| Forward tranconductance | gFS | VDS =5V, ID =4.5A | 23 | S | ||
| Diode forward voltage | VSD | IS=1.25A, VGS = 0V | 1.2 | V | ||
| Input Capacitance | Ciss | VDS =8V,VGS =0V,f =1MHz | 800 | pF | ||
| Output Capacitance | Coss | VDS =8V,VGS =0V,f =1MHz | 155 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =8V,VGS =0V,f =1MHz | 125 | pF | ||
| Turn-on delay time | td(on) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 18 | ns | ||
| Turn-on rise time | tr | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 5 | ns | ||
| Turn-off delay time | td(off) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 43 | ns | ||
| Turn-off fall time | tf | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 20 | ns | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=4A | 11 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID=4A | 2.3 | nC | ||
| Gate-Drain Charge | Qg d | VDS =10V,VGS =4.5V,ID=4A | 2.5 | nC |
2410121715_JSCJ-CJL2016_C504151.pdf
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