Low on state resistance JSCJ CJ2305A P Channel TrenchFET Power MOSFET for load switching performance
Key Attributes
Model Number:
CJ2305A
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-50℃~+150℃
RDS(on):
120mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 P-Channel
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
740pF
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
CJ2305A
Package:
SOT-23
Product Description
Product Overview
The CJ2305A is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power management with a low on-state resistance and fast switching characteristics.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | Ta=25 | -4.1 | A | ||
| Continuous Source-Drain Diode Current | IS | -0.8 | A | |||
| Maximum Power Dissipation | PD | d | 1.3 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 96.2 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -50 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -12 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.5 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-8V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-3.5A | 40 | m | ||
| VGS =-2.5V, ID =-3A | 55 | |||||
| VGS =-1.8V,ID=-2.0A | 90 | 120 | ||||
| Forward transconductance | gfs | VDS =-5V, ID =-4.1A | 6 | S | ||
| Input capacitance | Ciss | b,c | 740 | pF | ||
| Output capacitance | Coss | b,c | 290 | |||
| Reverse transfer capacitance | Crss | b,c | 190 | |||
| Total gate charge | Qg | b | 7.8 | 15 | nC | |
| Gate-source charge | Qgs | b | 4.5 | 9 | ||
| Gate-drain charge | Qgd | b | 1.2 | |||
| Gate resistance | Rg | b,c | 1.4 | 7 | ||
| Turn-on delay time | td(on) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 13 | 20 | ns | |
| VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 5 | 10 | ||||
| Rise time | tr | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 35 | 53 | ||
| VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 11 | 17 | ||||
| Turn-off Delay time | td(off) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 32 | 48 | ns | |
| VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 22 | 33 | ||||
| Fall time | tf | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 10 | 20 | ||
| VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 16 | 24 | ||||
| Continuous source-drain diode current | IS | TC=25 | -1.4 | A | ||
| Pulse diode forward current | ISM | a | -10 | A | ||
| Body diode voltage | VSD | IF=-3.3A | -1.2 | V |
2410121930_JSCJ-CJ2305A_C2875892.pdf
Related Products
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
