Versatile NPN transistor JUXING MMBTA05 with 300mW power dissipation and UL 94V0 rated SOT23 package
Key Attributes
Model Number:
MMBTA05
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTA05
Package:
SOT-23
Product Description
Product Overview
The MMBTA05 is an NPN transistor designed as a driver transistor. It offers high stability and reliability with a maximum power dissipation of 300mW. Suitable for various mounting positions, it comes in a SOT-23 small outline plastic package.
Product Attributes
- Brand: MMBTA05
- Package: SOT-23
- Epoxy UL Flammability Rating: 94V-0
- Mounting Position: Any
- Origin: (Not specified)
- Material: Plastic (implied by package type)
- Color: (Not specified)
- Certifications: UL 94V-0
Technical Specifications
| Parameters | Symbol | Value | Unit | Test Condition | Min | Max |
| Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) | ||||||
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 60 | V | |||
| Emitter-Base Voltage | VEBO | 4 | V | |||
| Collector Current-Continuous | IC | 500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55-+150 | ||||
| Thermal Resistance (Junction to Ambient) | RJA | 417 | /W | |||
| Electrical Characteristics (TA = 25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100uA, IE=0 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 60 | V | IC=1mA, IB=0 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 4 | V | IE=100uA, IC=0 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB=60V, IE=0 | ||
| Collector cut-off current | ICEO | 100 | nA | VCE=60V, IB=0 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB=3V, IC=0 | ||
| DC current gain | hFE(1)* | VCE=1V, IC=10mA | 100 | 400 | ||
| DC current gain | hFE(2)* | VCE=1V, IC=100mA | 100 | |||
| Collector-emitter saturation voltage | VCE(sat)* | 0.25 | V | IC=100mA, IB=10mA | ||
| Base-emitter voltage | VBE | 1.20 | V | VCE=1V,IC=100mA | ||
| Transition frequency | fT | 100 | MHz | VCE=2V, IC=10mA,f=100MHz | ||
*Pulse test: pulse width300us, duty cycle2.0%.
2411220527_JUXING-MMBTA05_C19193796.pdf
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