P Channel MOSFET JSCJ CJL3407 Featuring Low Gate Charge and Excellent RDS on for Load Switch Operation

Key Attributes
Model Number: CJL3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
700pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
CJL3407
Package:
SOT-23-6L
Product Description

Product Overview

The CJL3407 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: R7

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-30V
Zero gate voltage drain currentIDSSVDS =-24V,VGS = 0V-1A
Gate-source leakage currentIGSSVGS =20V, VDS = 0V100nA
Drain-source on-resistanceRDS(on)VGS =-10V, ID =-4.1A5060m
Drain-source on-resistanceRDS(on)VGS =-4.5V, ID =-3A6887m
Forward tranconductancegfsVDS =-5V, ID =-4A5.5S
Gate threshold voltageVGS(th)VDS =VGS, ID =-250A-1-1.4-3V
Diode forward voltageVSDIS=-1A,VGS=0V-0.2-0.4V
Input capacitanceCissVDS =-15V,VGS =0V,f =1MHz700pF
Output capacitanceCossVDS =-15V,VGS =0V,f =1MHz120pF
Reverse transfer capacitanceCrssVDS =-15V,VGS =0V,f =1MHz75pF
Turn-on delay timetd(on)VGS=-10V,VDS=-15V, RL=3.6,RGEN=38.6ns
Turn-on rise timetrVGS=-10V,VDS=-15V, RL=3.6,RGEN=35.0ns
Turn-off delay timetd(off)VGS=-10V,VDS=-15V, RL=3.6,RGEN=328.2ns
Turn-off fall timetfVGS=-10V,VDS=-15V, RL=3.6,RGEN=313.5ns

2410121641_JSCJ-CJL3407_C504116.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.