N channel power MOSFET JSCJ CJU02N60 offering superior switching performance and avalanche tolerance
Key Attributes
Model Number:
CJU02N60
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-
RDS(on):
4.4Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.2pF
Number:
1 N-channel
Output Capacitance(Coss):
56pF
Input Capacitance(Ciss):
435pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
-
Mfr. Part #:
CJU02N60
Package:
TO-252-2L
Product Description
Product Overview
The CJU02N60 is an N-channel mode power MOSFET utilizing advanced planar stripe technology. This MOSFET offers a minimum on-state resistance and superior switching performance, making it suitable for high-efficiency switch mode power supplies. It is designed to withstand high energy pulses in avalanche and commutation modes, featuring excellent heat dissipation and high switching speed. The device is 100% avalanche tested and is universally applied in power switching applications and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJU02N60
- Package Type: TO-252-2L Plastic-Encapsulate MOSFETS
- Marking: CJU02N60= Device code, Solid dot = Green molding compound device (if present), XXXX = Code
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 600 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 2.0 | 3.5 | 4.0 | V |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =600V, VGS =0V | 25 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS =10V, ID =1A | 4.4 | |||
| Forward Transconductance | gFS | VDS =50V, ID =1A | 6 | S | ||
| Input Capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 435 | pF | ||
| Output Capacitance | Coss | 12 | ||||
| Reverse Transfer Capacitance | Crss | 9.2 | ||||
| Turn-On Delay Time | td(on) | VDD=300V,ID=2A, VGS=10V,RG=18 | 12 | ns | ||
| Rise Time | tr | 21 | ||||
| Turn-Off Delay Time | td(off) | 30 | ||||
| Fall Time | tf | 24 | ||||
| Forward on Voltage | VSD | VGS =0V, IS=2A | 1.6 | V | ||
| Continuous Drain Current | ID | Ta=25 | 2 | A | ||
| Pulsed Drain Current | IDM | 8 | A | |||
| Power Dissipation | PD | Ta=25 | 1.25 | W | ||
| Single Pulsed Avalanche Energy | EAS | Tj=25,VDD=50V,L=64mH,IAS=2A,RG=25 | 128 | mJ | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Thermal Resistance Junction to Ambient | RJA | 100 | /W |
2410121929_JSCJ-CJU02N60_C19268976.pdf
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