Power Inverter MOSFETs JSCJ CJL2311 Featuring P channel and N channel with Low RDS on Characteristics
Key Attributes
Model Number:
CJL2311
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
RDS(on):
90mΩ@4.5V,2.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
500pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
10nC@2.5V
Mfr. Part #:
CJL2311
Package:
SOT-23-6L
Product Description
CJL2311 P-channel and N-channel Complementary MOSFETs
The CJL2311 utilizes advanced trench technology to deliver excellent RDS(on) and low gate charge. These complementary MOSFETs are designed to form a high-speed power inverter, making them suitable for a wide range of applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23-6L
Technical Specifications
| Parameter | Symbol | N-channel Test Condition | Min | Typ | Max | Unit | P-channel Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | VGS = 0V, ID =-250A | -20 | V | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS =20V,VGS = 0V,TJ=25 | 1 | A | VDS =-20V,VGS = 0V,TJ=25 | -1 | A | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS =20V,VGS = 0V,TJ=125 | 1 | mA | VDS =-20V,VGS = 0V,TJ=125 | -1 | mA | ||||
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =3.4A | 22 | 30 | m | VGS =-4.5V, ID =-2.5A | 75 | 90 | m | ||
| Drain-Source On-Resistance | VGS =2.5V, ID =3A | 30 | 35 | m | VGS =-2.5V, ID =-2A | 100 | 125 | m | |||
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =3.4A | 30 | m | VGS =-4.5V, ID =-2.5A | 75 | m | ||||
| Drain-Source On-Resistance | RDS(on) | VGS =2.5V, ID =3A | 35 | m | VGS =-2.5V, ID =-2A | 125 | m | ||||
| Drain-Source On-Resistance | RDS(on) | VGS =1.8V, ID =1.6A | 350 | m | VGS =-1.8V, ID =-1.6A | 250 | 350 | m | |||
| Forward Transconductance | gFS | VDS =10V, ID =3.4A | 4.5 | S | VDS =-5V, ID =-2.8A | 4 | S | ||||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 1 | V | VDS =VGS, ID =-250A | -0.4 | -1 | V | |||
| Input Capacitance | Ciss | VGS =0V,VDS =10V,f =1MHz | 480 | pF | VGS =0V,VDS =-10V,f =1MHz | 363 | pF | ||||
| Output Capacitance | Coss | VGS =0V,VDS =10V,f =1MHz | 90 | pF | VGS =0V,VDS =-10V,f =1MHz | 70 | pF | ||||
| Reverse Transfer Capacitance | Crss | VGS =0V,VDS =10V,f =1MHz | 80 | pF | VGS =0V,VDS =-10V,f =1MHz | 60 | pF | ||||
| Total Gate Charge | Qg | VDS=10V,VGS=4.5V,ID=3.4A | 6.2 | nC | VDS=-10V,VGS=-2.5V,ID=-3A | 5.5 | nC | ||||
| Gate-Source Charge | Qgs | VDS=10V,VGS=4.5V,ID=3.4A | 0.5 | nC | VDS=-10V,VGS=-2.5V,ID=-3A | 0.7 | nC | ||||
| Gate-Drain Charge | Qgd | VDS=10V,VGS=4.5V,ID=3.4A | 1.7 | nC | VDS=-10V,VGS=-2.5V,ID=-3A | 1.3 | nC | ||||
| Gate-source Leakage Current | IGSS | VGS =12V, VDS = 0V | 100 | nA | VGS =8V, VDS = 0V | 100 | nA | ||||
| Diode Forward Voltage | VSD | IS=2.7A,VGS=0V | 0.59 | V | IS=-0.7A,VGS=0V | -1.2 | V |
2410121929_JSCJ-CJL2311_C19267740.pdf
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