N channel MOSFET JSCJ 2SK1658 featuring low on resistance suitable for portable equipment applications
Key Attributes
Model Number:
2SK1658
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@4V
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
1.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
15pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
2SK1658
Package:
SOT-323
Product Description
Product Overview
The 2SK1658 is an N-channel MOSFET in a SOT-323 package, designed for low voltage drive applications. It features low on-resistance and fast switching speeds, making it ideal for portable equipment and easily designed drive circuits. This device is also easy to parallel.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±7 | V | |||
| Continuous Drain Current | ID | 0.1 | A | |||
| Power Dissipation | PD | (Ta = 25°C unless otherwise noted) | 0.2 | W | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | Tstg | -55 | - | 150 | °C | |
| Thermal Resistance from Junction to Ambient | RθJA | 625 | °C /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 10µA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V,VGS = 0V | 1 | µA | ||
| Gate –Source leakage current | IGSS | VGS =±3V, VDS = 0V | ±1 | µA | ||
| Gate Cut-off Voltage | VGS(off) | VDS = 3V, ID =1µA | 0.9 | 1.5 | V | |
| On Characteristics | ||||||
| Drain-Source On-Resistance | RDS(on) | VGS = 4V, ID =10mA | 10 | Ω | ||
| VGS =2.5V,ID =10mA | 15 | Ω | ||||
| Forward Transconductance | gFS | VDS =3V, ID = 10mA | 20 | mS | ||
| Dynamic Characteristics* | ||||||
| Input Capacitance | Ciss | VDS =3V,VGS =0V,f =1MHz | 15 | pF | ||
| Output Capacitance | Coss | VDS =3V,VGS =0V,f =1MHz | 10 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =3V,VGS =0V,f =1MHz | 1.5 | pF | ||
| Switching Characteristics* | ||||||
| Turn-On Delay Time | td(on) | VGS =3V, VDD =3V, ID =10mA, Rg=10Ω, RL=300Ω | 50 | ns | ||
| Rise Time | tr | VGS =3V, VDD =3V, ID =10mA, Rg=10Ω, RL=300Ω | 23 | ns | ||
| Turn-Off Delay Time | td(off) | VGS =3V, VDD =3V, ID =10mA, Rg=10Ω, RL=300Ω | 34 | ns | ||
| Fall Time | tf | VGS =3V, VDD =3V, ID =10mA, Rg=10Ω, RL=300Ω | 43 | ns | ||
2410121619_JSCJ-2SK1658_C504049.pdf
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