N channel MOSFET JSCJ 2SK3019A featuring low voltage drive and easy paralleling for enhanced current handling

Key Attributes
Model Number: 2SK3019A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF@5V
Number:
1 N-channel
Pd - Power Dissipation:
630mW
Input Capacitance(Ciss):
30pF@5V
Mfr. Part #:
2SK3019A
Package:
SOT-523
Product Description

Product Overview

The 2SK3019A is an N-channel MOSFET designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and simplifies drive circuit design. It is easily paralleled for increased current handling.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Product Type: SOT-523 Plastic-Encapsulate MOSFETS
  • Origin: China (implied by manufacturer)

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =10A30V
Gate-source leakage currentIGSSVDS =0V, VGS =20V2A
Zero gate voltage drain currentIDSSVDS =30V, VGS =0V1.0A
Gate threshold voltageVGS(th)VDS =3V, ID =100A0.71.5V
Static drain-source on-state resistanceRDS(on)VGS =4V, ID =10mA0.882
Static drain-source on-state resistanceRDS(on)VGS =2.5V, ID =1mA1.43
Forward transconductancegFSVDS =3V, ID =10mA20mS
Input capacitanceCissVDS =5V,VGS =0V,f =1MHz30pF
Output capacitanceCossVDS =5V,VGS =0V,f =1MHz10pF
Reverse transfer capacitanceCrssVDS =5V,VGS =0V,f =1MHz4pF
Turn-on delay timetd(on)VGS=10V,VDD=2V, RL=20,RG=1024ns
Rise timetrVGS=10V,VDD=2V, RL=20,RG=1030ns
Turn-off delay timetd(off)VGS=10V,VDD=2V, RL=20,RG=1038ns
Fall timetfVGS=10V,VDD=2V, RL=20,RG=1020ns

2410010403_JSCJ-2SK3019A_C2973202.pdf

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