Power MOSFET JSCJ CJW1012 Single N Channel Device Featuring Low Threshold Voltage and ESD Protection for Electronics
Key Attributes
Model Number:
CJW1012
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
12pF@16V
Number:
1 N-channel
Input Capacitance(Ciss):
100pF@16V
Pd - Power Dissipation:
275mW
Gate Charge(Qg):
750pC@4.5V
Mfr. Part #:
CJW1012
Package:
SOT-323
Product Description
Product Overview
The CJW1012 is a single N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed using an advanced Power Trench process to optimize RDS(ON). It features high-side switching, low on-resistance, low threshold voltage, and fast switching speed with ESD protection. This MOSFET is suitable for driver applications such as relays, solenoids, lamps, hammers, displays, and memories, as well as battery-operated systems, power supply converter circuits, and load/power switching in cell phones and pagers.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 0.45 | 1.2 | V | |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =4.5V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =16V, VGS =0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(on) | VGS =4.5V, ID =600mA | 700 | m | ||
| VGS =2.5V, ID =500mA | 850 | |||||
| Forward Transconductance | gFS | VDS =10V, ID =400mA | 1 | S | ||
| Input Capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 100 | pF | ||
| Output Capacitance | Coss | 16 | ||||
| Reverse Transfer Capacitance | Crss | 12 | ||||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V, ID =250mA | 750 | nC | ||
| Gate-Source Charge | Qgs | 75 | ||||
| Gate-Drain Charge | Qg | 225 | ||||
| Switching Times | td(on) | VDD=10V, RL=47, ID=200mA, VGS=4.5V,RG=10 | 5 | nS | ||
| tr | 5 | |||||
| td(off) | 25 | |||||
| tf | 11 | |||||
| Drain-Source Diode Forward Voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V |
| Parameter | Symbol | Value | Unit |
| Drain-Source voltage | VDSS | 20 | V |
| Gate-Source Voltage | VGS | 12 | V |
| Drain Current-Continuous | ID(DC) | 500 | mA |
| Drain Current -Pulsed | IDM(pulse) | 1000 | mA |
| Power Dissipation (Ta=25) | PD | 150 | mW |
| Maximum Power Dissipation (Tc=25) | PD | 275 | mW |
| Thermal Resistance Junction to Ambient | RJA | 833 | /W |
| Thermal Resistance Junction to Case | RJC | 455 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55 ~+150 |
2409300703_JSCJ-CJW1012_C504138.pdf
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