Low gate charge N Channel MOSFET JSCJ CJA03N10S with excellent heat dissipation in SOT 89 3L package
Key Attributes
Model Number:
CJA03N10S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Input Capacitance(Ciss):
607pF
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
13.7nC@10V
Mfr. Part #:
CJA03N10S
Package:
SOT-89-3L
Product Description
Product Overview
The CJA03N10S is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its design offers high ESD capability, high density cell for ultra-low RDS(on), and good stability with high EAS. The SOT-89-3L package provides excellent heat dissipation, making it suitable for power switching applications, hard switching and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: CJA03N10S
- Package Type: SOT-89-3L
- Certifications: Lead free product acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| STATIC CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =100V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1 | 3 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =3A | 140 | m | ||
| Forward transconductance | gFS | VDS =5V, ID =2.9A | 3 | S | ||
| Diode forward voltage | VSD | IS=3A, VGS = 0V | 1.2 | V | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 607 | pF | ||
| Output capacitance | Coss | VDS =25V,VGS =0V,f =1MHz | 38 | pF | ||
| Reverse transfer capacitance | Crss | VDS =25V,VGS =0V,f =1MHz | 20 | pF | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDS=30V, RGEN=2.5, ID =2A, RL=15 | 9.7 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDS=30V, RGEN=2.5, ID =2A, RL=15 | 6.5 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDS=30V, RGEN=2.5, ID =2A, RL=15 | 31 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDS=30V, RGEN=2.5, ID =2A, RL=15 | 8 | ns | ||
| Total gate charge | Qg | VDS =30V,VGS =10V,ID =3A | 13.7 | nC | ||
| Gate-source Charge | Qgs | VDS =30V,VGS =10V,ID =3A | 3.1 | nC | ||
| Gate-drain Charge | Qgd | VDS =30V,VGS =10V,ID =3A | 4.5 | nC | ||
| Maximum ratings | ||||||
| Drain-Source Voltage | VDS | Ta=25 unless otherwise noted | 100 | V | ||
| Gate-Source Voltage | VGS | Ta=25 unless otherwise noted | 20 | V | ||
| Continuous Drain Current | ID | Ta=25 unless otherwise noted | 3 | A | ||
| Pulsed Drain Current | IDM | note 1 | 20 | A | ||
| Power Dissipation | PD | Ta=25 unless otherwise noted | 0.5 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | note 2 | 250 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~+150 | |||
2410121917_JSCJ-CJA03N10S_C504059.pdf
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