N Channel Power MOSFET JSCJ CJAB60N03 with Excellent Heat Dissipation and High ESD Capability Package
Key Attributes
Model Number:
CJAB60N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.3mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
485pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.198nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
61.2nC@10V
Mfr. Part #:
CJAB60N03
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB60N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, excellent package for heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB60N03
- Packaging: Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.5 | V | ||
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 4.2 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =20A | 7.3 | m | ||
| Forward transconductance | gFS | VDS =10V, ID =20A | 24 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =100KHz | 2460 | pF | ||
| Output capacitance | Coss | 409 | ||||
| Reverse transfer capacitance | Crss | 373 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=25V, ID=14A | 61.2 | nC | ||
| Gate-source charge | Qgs | 4.7 | ||||
| Gate-drain charge | Qg | 19.7 | ||||
| Turn-on delay time | td(on) | VDS=15V,RL=0.75, VGS=10V,RG=3 | 19 | ns | ||
| Turn-on rise time | tr | 44 | ||||
| Turn-off delay time | td(off) | 58 | ||||
| Turn-off fall time | tf | 16.7 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 60 | A | |||
| Pulsed drain-source diode forward current | ISM | 240 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 60 | A | |||
| Pulsed Drain Current | IDM | 240 | A | |||
| Maximum Power Dissipation | PD | 1.5 | W | |||
| Single Pulsed Avalanche Energy | EAS | 420 | mJ | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | |||
2410121917_JSCJ-CJAB60N03_C504075.pdf
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