NPN Switching Transistor JSMSEMI MMBT3904 SOT23 Package General Purpose Amplification and Switching
Key Attributes
Model Number:
MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description
MMBT3904 NPN Switching Transistor
The MMBT3904 is an NPN epitaxial planar die construction switching transistor designed for general switching and amplification applications. It offers a complementary PNP type (MMBT3906) and is available in a SOT-23 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Complementary PNP Type: MMBT3906
- Package: SOT-23
- MSL: 1
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| VCBO | Collector-base voltage | Open emitter | 60 | V |
| VCEO | Collector-emitter voltage | Open base | 40 | V |
| VEBO | Emitter-base voltage | Open collector | 6 | V |
| IC | Collector current (DC) | 200 | mA | |
| ICM | Peak collector current | 200 | mA | |
| IBM | Peak base current | 100 | mA | |
| Ptot | Total power dissipation | Tamb25C | 250 | mW |
| Tstg | Storage temperature | -65 to +150 | C | |
| Tj | Junction temperature | 150 | C | |
| ICBO | Collector cut-off current | IE = 0; VCB = 30 V | -50 | nA |
| IEBO | Emitter cut-off current | IC = 0; VEB = 6 V | -50 | nA |
| hFE | DC current gain | VCE = 1 V; IC= 0.1mA | 60 - 300 | - |
| VCE = 1 V; IC= 1mA | 80 - 300 | - | ||
| VCE = 1 V; IC= 10mA | 100 - 300 | - | ||
| VCE = 1 V; IC= 50mA | 60 - 300 | - | ||
| VCE = 1 V; IC= 100mA | 30 - 300 | - | ||
| VCEsat | Collector-emitter saturation voltage | IC = 10mA; IB = 1mA | -200 | mV |
| IC = 50mA; IB = 5mA | -300 | mV | ||
| VBEsat | Base-emitter saturation voltage | IC = 10mA; IB = 1mA | 650 - 850 | mV |
| IC = 50mA; IB = 5mA | -950 | mV | ||
| Cobo | Output Capacitance | IE = Ie= 0; VCB= 5V; f = 1MHz | -4 | pF |
| Cibo | Input Capacitance | IC = Ic = 0; VBE=500mV; f =1MHz | -8 | pF |
| fT | Transition frequency | IC =10mA; VCE =20V; f =100MHz | 300 | MHz |
| F | Noise figure | IC=100mA; VCE =5V; RS =1k;f =10Hz to15.7kHz | -5 | dB |
| Switching times | td (delay time) | VCC=3Vdc, VBE=0.5Vdc | -35 | ns |
| tr (rise time) | IC=10mAdc, IB1=1mAdc | -35 | ns | |
| ts (storage time) | VCC=3Vdc, IC=10mAdc | -200 | ns | |
| tf (fall time) | IB1=IB2=1mAdc | -50 | ns |
Note: Pulse test: tp300 ms; d0.02.
2409271633_JSMSEMI-MMBT3904_C916374.pdf
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