Load Switching and Battery Charging Solutions Using JSCJ CJM1206 P Channel Power MOSFET Device
Key Attributes
Model Number:
CJM1206
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
900mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 P-Channel
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
740pF@4V
Pd - Power Dissipation:
-
Gate Charge(Qg):
7.8nC@4.5V
Mfr. Part #:
CJM1206
Package:
DFNWB-6-EP(2x2)
Product Description
Product Overview
The CJM1206 is a P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(on) and low gate charge, enabling operation with low gate voltage. This device is ideal for load switching applications and various other uses, including PWM applications, load switches, and battery charging in cellular handsets.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate
- Model: CJM1206
- Package: DFNWB2*2-6L-J
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Drain Current-Continuous | ID | -6 | A | |||
| Drain Current-Pulsed | IDM | -20 | A | |||
| Thermal Resistance Junction to Ambient | RθJA | 357 | °C/W | |||
| Junction Temperature | Tj | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -12 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.5 | -0.9 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =±8V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-8V, VGS =0V | -1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-3.5A | 30 | 45 | mΩ | |
| VGS =-2.5V, ID =-3A | 40 | 60 | mΩ | |||
| VGS =-1.8V,ID=-2.0A | 60 | 90 | mΩ | |||
| Forward transconductance | gfs | VDS =-5V, ID =-4.1A | 6 | S | ||
| Input capacitance | Ciss | VDS =-4V,VGS =0V,f =1MHz | 740 | pF | ||
| Output capacitance | Coss | 290 | pF | |||
| Reverse transfer capacitance | Crss | 190 | pF | |||
| Total gate charge | Qg | VDS =-4V,VGS =-4.5V, ID =-4.1A | 7.8 | 15 | nC | |
| Gate-source charge | Qgs | 1.2 | nC | |||
| Gate-drain charge | Qgd | VDS =-4V,VGS =-2.5V, ID =-4.1A | 1.6 | nC | ||
| Gate resistance | Rg | f =1MHz | 1.4 | 7 | Ω | |
| Turn-on delay time | td(on) | VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω | 13 | 20 | ns | |
| Rise time | tr | 35 | 53 | ns | ||
| Turn-off Delay time | td(off) | 32 | 48 | ns | ||
| Fall time | tf | 10 | 20 | ns | ||
| Turn-on delay time | td(on) | VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω | 5 | 10 | ns | |
| Rise time | tr | 11 | 17 | ns | ||
| Turn-off delay time | td(off) | 22 | 33 | ns | ||
| Fall time | tf | 16 | 24 | ns | ||
| Continuous source-drain diode current | IS | -6 | A | |||
| Pulse diode forward current | ISM | -20 | A | |||
| Body diode voltage | VSD | IF=-3.3A | -0.4 | -1.2 | V |
2410121629_JSCJ-CJM1206_C504118.pdf
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