Power MOSFET JSCJ CJT03P10 P Channel Type with Superior Thermal Resistance and SOT 223 Package Design
Key Attributes
Model Number:
CJT03P10
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
RDS(on):
190mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 P-Channel
Output Capacitance(Coss):
170pF
Input Capacitance(Ciss):
2.5nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
40nC@4.5V
Mfr. Part #:
CJT03P10
Package:
SOT-223
Product Description
Product Overview
The CJT03P10 is a P-Channel Power MOSFET utilizing advanced trench technology for superior RDS(ON) and low gate charge. Its high-density cell design ensures ultra-low RDS(ON) and it is fully characterized for avalanche voltage and current. The SOT-223 package provides excellent heat dissipation, making it suitable for a wide range of applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Device Code: CJT03P10
- Package Type: SOT-223
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | -3 | A | ||
| Pulsed Drain Current | IDM | (note1) | -10 | A | ||
| Power Dissipation | PD | (note3) | 3.1 | W | ||
| Thermal Resistance Junction to Ambient | RJA | (note3) | 40 | /W | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-100V,VGS = 0V,TJ=25 | -1 | µA | ||
| Zero gate voltage drain current | IDSS | VDS =-100V,VGS = 0V,TJ=125 | -1 | mA | ||
| Gate-source leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-3A | 190 | mΩ | ||
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-1A | 210 | mΩ | ||
| Forward transconductance | gFS | VDS =-5V, ID =-3A | 153 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1 | -3 | V | |
| Input capacitance | Ciss | VDS =-25V,VGS =0V,f =1MHz | 170 | pF | ||
| Output capacitance | Coss | VDS =-25V,VGS =0V,f =1MHz | 90 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-25V,VGS =0V,f =1MHz | 16 | pF | ||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-50V, ID=-2.6A,RGEN=25Ω (note 1,2) | 18 | ns | ||
| Turn-on rise time | tr | VGS=-10V,VDS=-50V, ID=-2.6A,RGEN=25Ω (note 1,2) | 30 | ns | ||
| Turn-off delay time | td(off) | VGS=-10V,VDS=-50V, ID=-2.6A,RGEN=25Ω (note 1,2) | 100 | ns | ||
| Turn-off fall time | tf | VGS=-10V,VDS=-50V, ID=-2.6A,RGEN=25Ω (note 1,2) | 25 | ns | ||
| Diode forward voltage | VSD | IS=-1A,VGS=0V (note 3) | -0.75 | -1.5 | V | |
| Continuous drain-source diode forward current | IS | -3 | A | |||
| Pulsed drain-source diode forward current | ISM | (note 1) | -10 | A |
2411051609_JSCJ-CJT03P10_C22396827.pdf
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