Silicon Epitaxial Planar Type Transistor JSMSEMI SS8050 Suitable for Circuits Requiring 1.5A Current
Key Attributes
Model Number:
SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
SS8050
Package:
TO-92
Product Description
Product Overview
The JSMICRO Semiconductor SS8050 is a Silicon Epitaxial Planar Transistor designed for high collector current applications. It offers a continuous collector current of 1.5A and is complementary to the SS8550 transistor. This device is suitable for various electronic circuits requiring robust current handling capabilities.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: SS8050
- Material: Silicon Epitaxial Planar
- Package Type: TO-92
- Origin: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | Units |
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current - Continuous | IC | 1.5 | A | |||
| Collector Dissipation | PC | TC=25 | 2 | W | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 40 | - | - | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=2mA,IB=0 | 25 | - | - | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 6 | - | - | V |
| Collector cut-off current | ICBO | VCB=35V,IE=0 | - | - | 0.1 | A |
| Collector cut-off current | ICEO | VCE=20V,IB=0 | - | - | 0.1 | A |
| Emitter cut-off current | IEBO | VEB=6V,IC=0 | - | - | 0.1 | A |
| DC current gain | hFE | VCE=1V,IC=5mA | 45 | 85 | - | |
| VCE=1V,IC=100mA | 40 | 135 | 160 | |||
| VCE=1V,IC=800mA | - | 110 | 300 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=800 mA, IB= 80mA | - | 0.28 | 0.5 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=800 mA, IB= 80mA | - | 0.98 | 1.2 | V |
| Base-emitter voltage | VBE | VCE=1V, IC=10mA | - | 0.66 | 1 | V |
| Output capacitance | Cob | VCB=10V, IE=0, f=1MHz | - | 9.0 | - | pF |
| Transition frequency | fT | VCE=10V, IC= 50mA | 100 | 190 | - | MHz |
hFE CLASSIFICATION
| Classification | B | C | D |
| hFE | 85-160 | 120-200 | 160-300 |
PACKAGE OUTLINE
| TO-92 | Dim | Min | Max |
| A | 4.4 | 4.7 | |
| B | 4.3 | 4.7 | |
| C | 3.43 | Typical | |
| D | 0.38 | 0.55 | |
| E | 1.1 | 1.4 | |
| G | 1.27 | Typical | |
| H | 14.1 | 14.5 | |
| J | 0.36 | 0.51 | |
| All Dimensions in mm |
2401051655_JSMSEMI-SS8050_C2931495.pdf
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