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quality switching device JSCJ CJU40N10 N Channel Power MOSFET with ultra low RDS on and avalanche capability factory
quality switching device JSCJ CJU40N10 N Channel Power MOSFET with ultra low RDS on and avalanche capability factory

switching device JSCJ CJU40N10 N Channel Power MOSFET with ultra low RDS on and avalanche capability

Key Attributes
Model Number: CJU40N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
390pF
Number:
1 N-channel
Output Capacitance(Coss):
580pF
Pd - Power Dissipation:
140W
Input Capacitance(Ciss):
6.8nF
Gate Charge(Qg):
180nC@10V
Mfr. Part #:
CJU40N10
Package:
TO-252-2L
Product Description

Product Description

This advanced high voltage N-Channel Power MOSFET is designed for high energy applications in avalanche mode and efficient switching. It features a fast recovery time for its drain-to-source diode. Ideal for high voltage, high-speed switching applications such as power supplies, converters, power motor controls, and bridge circuits. Its high density cell design ensures ultra low RDS(on), and it is fully characterized for avalanche voltage and current, offering good stability and uniformity with high EAS. The special process technology provides high ESD capability, and the package offers excellent heat dissipation.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Device Code: U40N10
  • Package Type: TO-252-2L
  • Material: Plastic-Encapsulate MOSFETS
  • Marking: U40N10 = Device code. Solid dot = Green molding compound device if none, the normal device. XXXX = Code.

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (TC=25) 40 A
Pulsed Drain Current IDM 160 A
Single Pulsed Avalanche Energy EAS (PW10s, Duty cycle1%) 320 mJ
Thermal Resistance from Junction to Ambient RJA (TC=25, Mounted on 1 in FR-4 board) 100 /W
Maximum Power Dissipation PD (TC=25) 140 W
Thermal Resistance from Junction to Case RJC 0.89 /W
Operating Junction and Storage Temperature Range TJ ,Tstg -55 +150
ELECTRICAL CHARACTERISTICS
Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 100 V
Gate-body leakage current IGSS VDS =0V, VGS =20V 100 nA
Zero gate voltage drain current IDSS VDS =80V, VGS =0V 1 A
TJ =25 15 A
TJ =125 52 A
Gate-threshold voltage VGS(th) VDS =VGS, ID =250A 2.0 2.7 4.0 V
Static drain-source on-state resistance RDS(on) VGS =10V, ID =28A 14 m
Forward transconductance gFS VDS =25V, ID =28A 32 S
DYNAMIC CHARACTERISTICS
Input capacitance Ciss VDS =30V,VGS =0V, f =1MHz 6800 pF
Output capacitance Coss 580
Reverse transfer capacitance Crss 390
SWITCHING CHARACTERISTICS
Total gate charge Qg VDS=30V,VGS=10V , ID=30A 94 nC
Gate-source charge Qgs 16
Gate-drain charge Qgd 24
Turn-on delay time td(on) VDS=30V, VGS=10V,ID=2A, RG=2.5 , RL=15 180 ns
Turn-on rise time tr 34
Turn-off delay time td(off) 45
Turn-off fall time tf 13
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-source diode forward voltage VSD VGS =0V, IS=28A 1.2 V
Continuous drain-source diode forward current IS 40 A
Pulsed drain-source diode forward current ISM 160 A

2411121105_JSCJ-CJU40N10_C3031891.pdf

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