dual N Channel MOSFET JSCJ CJQ4824 ideal for load switch and PWM applications in electronic systems
Key Attributes
Model Number:
CJQ4824
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-40℃~+150℃
RDS(on):
14.5mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 N-channel
Input Capacitance(Ciss):
823pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
CJQ4824
Package:
SOIC-8
Product Description
Product Overview
The CJQ4824 is a dual N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for use as a load switch or in PWM applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate
- Color: Green molding compound device (if solid dot marking is present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.7 | 1.7 | 3.0 | V |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =10A | 10.5 | 15 | m | |
| VGS =4.5V, ID =9A | 14.5 | 20 | m | |||
| Forward tranconductance | gFS | VDS =5V, ID =5A | 15 | S | ||
| Diode forward voltage | VSD | IS=10A, VGS = 0V | 0.85 | V | ||
| Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 823 | pF | ||
| Output capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 138 | pF | ||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 100 | pF | ||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=1.8,RGEN=3 | 10 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDS=15V, RL=1.8,RGEN=3 | 8 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDS=15V, RL=1.8,RGEN=3 | 32 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDS=15V, RL=1.8,RGEN=3 | 6 | ns | ||
| Total gate charge | Qg | VGS=10V,VDS=15V, ID= 10A | 15 | nC | ||
| Gate-source charge | Qgs | VGS=10V,VDS=15V, ID= 10A | 4 | nC | ||
| Gate-drain charge | Qgd | VGS=10V,VDS=15V, ID= 10A | 5 | nC | ||
| Continuous Drain Current (t 10s) | ID | Note 1 | 10 | A | ||
| Pulsed Drain Current | IDM | Note 2 | 28 | A | ||
| Power Dissipation | PD | 1.25 | W | |||
| Thermal Resistance from Junction to Ambient (t 10s) | RJA | Note 1 | 100 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 |
2411121115_JSCJ-CJQ4824_C504167.pdf
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