Power Management Dual N Channel MOSFET JSCJ CJL8205A Featuring Low RDS on and High Current Handling
Key Attributes
Model Number:
CJL8205A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ
Gate Threshold Voltage (Vgs(th)):
600mV
Reverse Transfer Capacitance (Crss@Vds):
124pF
Number:
2 N-Channel
Input Capacitance(Ciss):
815pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
CJL8205A
Package:
SOT-23-6L
Product Description
Product Overview
The CJL8205A is a Dual N-Channel TrenchFET Power MOSFET designed for efficient power management applications. It offers excellent RDS(on), low gate charge, and high power and current handling capabilities, making it suitable for battery protection, load switching, and power management circuits. The device comes in a compact SOT-23-6L surface mount package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJL8205A
- Package: SOT-23-6L
- Material: Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | 6 | A | |||
| Pulsed Drain Current | IDM | (note 1) | 25 | A | ||
| Thermal Resistance Junction to Ambient | RθJA | (note 2) | 357 | °C/W | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | ~+150 | °C | ||
| Lead Temperature for Soldering | TL | (1/8'' from case for 10 s) | 260 | °C | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 19 | V | ||
| Zero gate voltage drain current | IDSS | VDS =18V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA (note 3) | 0.8 | 1.2 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A (note 3) | 23 | 30 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3A (note 3) | 30 | 45 | mΩ | |
| Forward tranconductance | gFS | VDS =5V, ID =4.5A (note 3) | 12 | S | ||
| Diode forward voltage | VSD | IS=1.25A, VGS = 0V (note 3) | 0.6 | 1.5 | V | |
| Input Capacitance | Ciss | VDS =8V,VGS =0V,f =1MHz (note4) | 815 | pF | ||
| Output Capacitance | Coss | VDS =8V,VGS =0V,f =1MHz (note4) | 158 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =8V,VGS =0V,f =1MHz (note4) | 124 | pF | ||
| Turn-on delay time | td(on) | VDD=10V,VGS=4V, ID=1A,RGEN=10Ω (note 4) | 16 | ns | ||
| Turn-on rise time | tr | VDD=10V,VGS=4V, ID=1A,RGEN=10Ω (note 4) | 8 | ns | ||
| Turn-off delay time | td(off) | VDD=10V,VGS=4V, ID=1A,RGEN=10Ω (note 4) | 36 | ns | ||
| Turn-off fall time | tf | VDD=10V,VGS=4V, ID=1A,RGEN=10Ω (note 4) | 18 | ns | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=4A (note 4) | 14 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID=4A (note 4) | 2.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS =10V,VGS =4.5V,ID=4A (note 4) | 2.5 | nC |
2411121115_JSCJ-CJL8205A_C504156.pdf
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