PNP Power Transistor JSMSEMI 2SA1492 Semiconductor Component for Audio and General Purpose Circuits
Product Overview
The JSMICR0 Semiconductor PNP Power Transistor 2SA1492 is a high-performance component designed for audio and general-purpose applications. It features a high Collector-Emitter Breakdown Voltage of -180V (Min) and good linearity of hFE, making it a reliable choice for demanding circuits. It is a complement to the 2SC3856 type.
Product Attributes
- Brand: JSMICR0
- Type: Semiconductor PNP Power Transistor
- Model: 2SA1492
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA ; IB= 0 | -180 | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5.0A; IB= -0.5A | -2.0 | V | ||
| ICBO | Collector Cutoff Current | VCB= -180V ; IE=0 | -100 | A | ||
| IEBO | Emitter Cutoff Current | VEB= -6V; IC=0 | -100 | A | ||
| hFE | DC Current Gain | IC= -3A ; VCE= -4V | 50 | 180 | ||
| COB | Output Capacitance | IE= 0 ; VCB= -10V;f= 1.0MHz | 500 | pF | ||
| fT | Current-GainBandwidth Product | IE= 0.5A ; VCE= -12V | 20 | MHz | ||
| ton | Turn-on Time | IC= -10A ,RL= 4, IB1= -IB2= -1A,VCC= -40V | 0.6 | s | ||
| tstg | Storage Time | IC= -10A ,RL= 4, IB1= -IB2= -1A,VCC= -40V | 0.9 | s | ||
| tf | Fall Time | IC= -10A ,RL= 4, IB1= -IB2= -1A,VCC= -40V | 0.2 | s | ||
| VCBO | Collector-Base Voltage | -180 | V | |||
| VCEO | Collector-Emitter Voltage | -180 | V | |||
| VEBO | Emitter-Base Voltage | -6 | V | |||
| IC | Collector Current-Continuous | -15 | A | |||
| IB | Base Current-Continuous | -4 | A | |||
| PC | Collector Power Dissipation @ TC=25 | 130 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -55 | 150 |
2401051800_JSMSEMI-2SA1492_C5381777.pdf
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