Field Effect Transistor P Channel JSCJ CJK1211 Designed for PWM Load Switching and Battery Charging
Key Attributes
Model Number:
CJK1211
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
590pF
Number:
1 P-Channel
Input Capacitance(Ciss):
2.7nF
Pd - Power Dissipation:
450mW
Gate Charge(Qg):
-
Mfr. Part #:
CJK1211
Package:
SOT-23-3L
Product Description
Product Overview
The CJK1211 is a P-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features an advanced trench MOSFET process technology and ultra-low on-resistance with low gate charge, making it suitable for PWM applications, load switching, and battery charging in cellular handsets.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -12 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-12V,VGS = 0V | -1 | A | ||
| Gate-Source Leakage Current | IGSS | VGS =8V, VDS = 0V | 100 | nA | ||
| Drain-Source On-Resistance | RDS(on) | VGS =-4.5V, ID =-6A | 25 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS =-2.5V, ID =-6A | 30 | m | ||
| Forward Transconductance | gFS | VDS =-5V, ID =-6A | 9 | S | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.5 | -1.2 | V | |
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 2700 | pF | ||
| Output Capacitance | Coss | VDS =-10V,VGS =0V,f =1MHz | 680 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-10V,VGS =0V,f =1MHz | 590 | pF | ||
| Turn-on Delay Time | td(on) | VDD=-10V,VGEN=-4.5V, ID =-1A,Rg=10 | 11 | ns | ||
| Turn-on Rise Time | tr | VDD=-10V,VGEN=-4.5V, ID =-1A,Rg=10 | 35 | ns | ||
| Turn-off Delay Time | td(off) | VDD=-10V,VGEN=-4.5V, ID =-1A,Rg=10 | 30 | ns | ||
| Turn-off Fall Time | tf | VDD=-10V,VGEN=-4.5V, ID =-1A,Rg=10 | 10 | ns | ||
| Diode Forward Voltage | VSD | VGS =0V, IS=-2A | -0.8 | V |
2411121115_JSCJ-CJK1211_C504105.pdf
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