High Power Plastic Encapsulated MOSFET JSCJ CJAC13TH06 Suitable for SMPS and High Frequency Circuits
Key Attributes
Model Number:
CJAC13TH06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
74.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.298nF
Pd - Power Dissipation:
140W
Gate Charge(Qg):
63.7nC@10V
Mfr. Part #:
CJAC13TH06
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC13TH06 is a Plastic-Encapsulated N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capability, high density cell design for ultra-low RDS(ON), and good heat dissipation, making it suitable for a wide variety of applications including SMPS, general purpose applications, hard switched and high frequency circuits, Uninterruptible Power Supply, and power management.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC13TH06
- Package: PDFNWB56-8L
- Material: Plastic-Encapsulate
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1.0 | A | ||
| Gate-Body Leakage Current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 2.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =12A | 2.2 | 3.0 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =12A | 3.0 | 4.5 | m | |
| Total Gate Charge | Qg | VDS =30V,VGS =10V,ID =25A | 63.7 | nC | ||
| Gate-Source Charge | Qgs | VDS =30V,VGS =10V,ID =25A | 10.3 | |||
| Gate-Drain Charge | Qg d | VDS =30V,VGS =10V,ID =25A | 11.4 | |||
| Input Capacitance | Ciss | VDS =25V,VGS =0V,f =100kHz | 5298 | pF | ||
| Output Capacitance | Coss | VDS =25V,VGS =0V,f =100kHz | 1635 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =25V,VGS =0V,f =100kHz | 74.8 | pF | ||
| Turn-on Delay Time | td(on) | VGS=10V, VDS=30V, RG=2, ID=25A | 21.8 | ns | ||
| Turn-on Rise Time | tr | VGS=10V, VDS=30V, RG=2, ID=25A | 6.3 | ns | ||
| Turn-off Delay Time | td(off) | VGS=10V, VDS=30V, RG=2, ID=25A | 78.5 | ns | ||
| Turn-off Fall Time | tf | VGS=10V, VDS=30V, RG=2, ID=25A | 27.1 | ns | ||
| Body Diode Voltage | VSD | IS=20A,VGS=0V | 1.3 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 130 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | 390 | A | ||
| Maximum Power Dissipation | PD | (Ta=25) | 250 | W | ||
| Thermal Resistance Junction to Ambient | RJA | (Ta=25) | 62 | /W | ||
| Thermal Resistance Junction to Case | RJC | (Ta=25) | 0.89 | /W | ||
| Single Pulsed Avalanche Energy | EAS | (Ta=25) | 140 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 |
2410121917_JSCJ-CJAC13TH06_C504082.pdf
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