N Channel MOSFET JSCJ CJAB40SN10 designed for SMPS uninterruptible power supplies and general purpose
Key Attributes
Model Number:
CJAB40SN10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-
RDS(on):
11mΩ@4.5V,9A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
11pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
2.92nF@50V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
-
Mfr. Part #:
CJAB40SN10
Package:
PDFNWB-8-EP(3.3x3.3)
Product Description
Product Overview
The CJAB40SN10 is an N-Channel Power MOSFET utilizing SGT technology for excellent RDS(ON) and low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. This MOSFET offers good stability and uniformity with high EAS and excellent package for good heat dissipation, making it suitable for a wide variety of applications including load switching, uninterruptible power supplies, SMPS, general-purpose applications, and hard switched and high-frequency circuits.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB40SN10
- Origin: CHINA (implied by manufacturer location)
- Material: Plastic Encapsulate MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.4 | 2.2 | V | |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =12A | 8.5 | 13 | m | |
| VGS =4.5V, ID =9A | 11 | 17 | m | |||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =50V,VGS =0V, f =1MHz | 1460 | pF | ||
| Output capacitance | Coss | 280 | pF | |||
| Reverse transfer capacitance | Crss | 5.2 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS=50V, VGS=10V, ID=20A | 25 | nC | ||
| Gate-source charge | Qgs | 5.0 | nC | |||
| Gate-drain charge | Qgd | 6.5 | nC | |||
| Turn-on delay time | td(on) | VDS=50V,ID=20A, VGS=10V,RG=10 | 6.5 | ns | ||
| Turn-on rise time | tr | 4.5 | ns | |||
| Turn-off delay time | td(off) | 19 | ns | |||
| Turn-off fall time | tf | 3.5 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=12A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 40 | A | |||
| Pulsed drain-source diode forward current | ISM | 160 | A | |||
| Reverse Recovery Time | trr | VR=50V, IF=20A, dIF/dt=500A/s | 42 | ns | ||
| Reverse Recovery Charge | Qrr | 160 | nC | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Ta=25) | 40 | A | ||
| Pulsed Drain Current | IDM | 160 | A | |||
| Single Pulsed Avalanche Energy | EAS | 80 | mJ | |||
| Power Dissipation | PD | (Ta=25) | 1.5 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | |||
2411121115_JSCJ-CJAB40SN10_C504073.pdf
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