Mesa glass passivated SCR JSCJ CS008L 10-30uA featuring sensitive gate triggering and PNPN 4 layer structure
Key Attributes
Model Number:
CS008L 10-30uA
Product Custom Attributes
Holding Current (Ih):
3mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
8A
Operating Temperature:
-40℃~+110℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
CS008L 10-30uA
Package:
SOT-23-3LK
Product Description
Product Overview
This product is a sensitive gate SCR (Silicon Controlled Rectifier) featuring a PNPN 4-layer structure and mesa glass passivation technology. It utilizes multi-layer metal electrodes and is designed for sensitive gate triggering applications. The device is housed in a SOT-23-3L plastic-encapsulated package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23-3L
- Technology: Mesa Glass Passivated
- Structure: PNPN 4-layer
- Electrodes: Multi Layers Metal
Technical Specifications
| Symbol | Parameter | Test Condition | Value | Unit | Min | Max |
| MAIN CHARACTERISTICS | Repetitive peak off-state voltage | Tj=25 | 600 | V | ||
| RMS on-state current | SOT-23-3LK(TC60)Fig. 1,2 | 0.5 | A | |||
| Non repetitive surge peak on-state current | Full sine wave Tj(init)=25, tp=20ms; Fig. 3,5 | 8 | A | |||
| I2t value | tp=10ms | 0.32 | A2s | |||
| ELECTRICAL CHARACTERISTICS | Gate trigger current | Fig. 6 | A | 10 | 200 | |
| Gate trigger voltage | VD=12V, IT =10mA, Tj=25, Fig. 6 | V | 0.8 | |||
| Non-triggering gate voltage | VD=VDRM, Tj=125 | V | 0.2 | |||
| Holding current | VD=12V, IT =10mA, Tj=25 | mA | 100 | |||
| On-state Voltage | ITM=1.2A , Fig. 4 | V | 1.5 | |||
| THERMAL RESISTANCES | Junction to case (AC) | 23 | /W | |||
| Junction to ambient | 400 | /W |
2304140030_JSCJ-CS008L-10-30uA_C527093.pdf
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