Lead free PNP transistor JSMSEMI MMBT5401 featuring epitaxial planar die construction for medium power amplification
Key Attributes
Model Number:
MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
-
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description
Product Overview
The MMBT5401 is a PNP general-purpose transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary NPN type, the MMBT5551, is also available. This transistor is offered in a lead-free version.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: SOT-23
- Material: Plastic surface mounted package
- Certifications: Available in lead-free version
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Max. | Unit |
| Maximum Ratings | VCBO | -160 | V | ||
| VCEO | -150 | V | |||
| VEBO | -5 | V | |||
| IC (DC) | -0.6 | A | |||
| PD (Total device dissipation) @ Ta=25 | 0.35 | W | |||
| Electrical Characteristics @ Ta=25 | V(BR)CBO | IC=-100A,IE=0 | -160 | V | |
| V(BR)CEO | IC=-1mA,IB=0 | -150 | V | ||
| V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Cut-off Currents | ICBO | IE = 0; VCB = -120V | -50 | nA | |
| IEBO | IC = 0; VEB = -3V | -50 | nA | ||
| DC Current Gain | hFE | VCE = -5V; IC= -1mA | 50 | 300 | |
| hFE | VCE = -5V;IC = -10mA | 100 | |||
| hFE | VCE = -5V;IC = -50 mA | 50 | |||
| Saturation Voltages | VCE(sat) | IC = -10 mA; IB = -1 mA | -0.2 | V | |
| VBE(sat) | IC = -10 mA; IB = -1 mA | -1 | V | ||
| Transition Frequency | fT | IC = -10mA; VCE = -10V; f = 100MHz | 100 | 300 | MHz |
| Output Capacitance | Cobo | IE=0; VCB= -10V, f = 1.0MHz | 6.0 | pF |
2306301522_JSMSEMI-MMBT5401_C916371.pdf
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