Power Amplification and Motor Driver Electronic Component JSMSEMI S8550 PNP Semiconductor Transistor

Key Attributes
Model Number: S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
150MHz
Type:
-
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8550
Package:
SOT-23
Product Description

Product Overview

The S8550 is a PNP semiconductor transistor designed for low-frequency power amplification and as a driver for small motors. It is complementary to the S8050, offering a versatile solution for various electronic applications.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Product Type: PNP Semiconductor Transistor
  • Complementary to: S8050
  • Marking: S8550:2TY

Technical Specifications

CharacteristicSymbolRatingUnitTest ConditionMin.Typ.Max.
Collector-Base VoltageVCBO-40Vdc
Collector-Emitter VoltageVCEO-25Vdc
Emitter-Base VoltageVEBO-5.0Vdc
Collector CurrentIc-500mAdc
Collector Power DissipationPC225mW
Junction TemperatureTj150
Storage Temperature RangeTstg-55150
Collector Cutoff CurrentICBOAVCB=-30V,IE=0-0.1
Emitter Cutoff CurrentIEBOAVEB=-5V,IC=0-0.1
Collector-Base Breakdown VoltageV(BR)CBO-40VIC=-100A-40
Collector-Emitter Breakdown VoltageV(BR)CEO-25VIC=-10mA-25
Emitter-Base Breakdown VoltageV(BR)EBO-5VIE=-100A-5
DC Current GainHFE(1)VCE=-1V, IC=- 100mA85400
DC Current GainHFE(2)VCE=-1V, Ic=- 500mA40
Collector-Emitter Saturation VoltageVCE(sat)VIC=- 500mA, IB=-50mA-0.6
Base-Emitter Saturation VoltageVBE(sat)VIC=- 500mA, IB=-50mA-1.2
Base-Emitter VoltageVBEVVCE=-1V, IC=- 10mA-0.8-1.0
Transition FrequencyfTMHzVCE=-5V, IC=- 10mA100120
Collector Output CapacitanceCobpFVCB=-10V,IE=0, f=1MHz1330

2308071512_JSMSEMI-S8550_C916391.pdf

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