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quality NPN Silicon Transistor in SOT23 Package JSMSEMI MMBTA44 with High Voltage and Low Saturation Voltage factory
quality NPN Silicon Transistor in SOT23 Package JSMSEMI MMBTA44 with High Voltage and Low Saturation Voltage factory

NPN Silicon Transistor in SOT23 Package JSMSEMI MMBTA44 with High Voltage and Low Saturation Voltage

Key Attributes
Model Number: MMBTA44
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
MMBTA44
Package:
SOT-23
Product Description

Product Overview

SOT-23 Plastic Package NPN Silicon Transistor. Features high voltage and low saturation voltage, making it suitable for high voltage control circuits. Available in hFE classifications ranging from 50 to 200.

Product Attributes

  • Brand: JSMICR0 Semiconductor
  • Model: MMBTA44
  • Package: SOT-23 Plastic Package
  • Origin: Semiconductor (implied by brand)

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage VCBO 500 V
Collector to Emitter Voltage VCEO 400 V
Emitter to Base Voltage VEBO 6.0 V
Collector Current IC 300 mA
Collector Power Dissipation PC 350 (Ta=25) mW
Collector Power Dissipation PC 1.5 (TC=25) W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage VCBO IC=100A, IE=0 500 V
Collector to Emitter Breakdown Voltage VCEO IC=1.0mA, IB=0 400 V
Emitter to Base Breakdown Voltage VEBO IE=10A, IC=0 6.0 V
Collector Cut-Off Current ICBO VCB=400V, IE=0 0.1 A
Collector Cut-Off Current ICEO VCE=400V, VBE=0 0.5 A
Emitter Cut-Off Current IEBO VCE=4.0V, IC=0 0.1 A
DC Current Gain hFE(1) VCE=10V, IC=10mA 50 200
DC Current Gain hFE(2) VCE=10V, IC=100mA 40
DC Current Gain hFE(3) VCE=10V, IC=50mA 45
DC Current Gain hFE(4) VCE=10V, IC=1.0mA 40
Collector-Emitter Saturation Voltage VCE(sat)(1) IC=1.0mA, IB=0.1mA 0.4 V
Collector-Emitter Saturation Voltage VCE(sat)(2) IC=10mA, IB=1.0mA 0.5 V
Collector-Emitter Saturation Voltage VCE(sat)(3) IC=50mA, IB=5.0mA 0.75 V
Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1.0mA 0.75 V
Output Capacitance Cob VCB=20V, IE=0, f=1.0MHz 7.0 pF

2409272301_JSMSEMI-MMBTA44_C5381782.pdf

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