Low noise silicon epitaxial planar transistor JSMSEMI S9014 suitable for pre amplifier applications
Key Attributes
Model Number:
S9014
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S9014
Package:
SOT-23
Product Description
Product Overview
The S9014 is a Silicon Epitaxial Planar Transistor designed for per-amplifier low level and low noise applications. It offers excellent hFE linearity and a power dissipation of 0.2W. This transistor is complementary to the S9015.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon Epitaxial Planar
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 45 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current - Continuous | IC | 100 | mA | |||
| Collector Dissipation | PC | @ TA=25 | 200 | mW | ||
| Junction and Storage Temperature | TJ, TSTG | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=0.1mA,IB=0 | 45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=50V,IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=35V,IB=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=3V,IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=5V,IC=1mA | 200 | 1000 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB= 5mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB= 5mA | 1 | V | ||
| Base-emitter on voltage | VBE (on ) | VCE=5V, IC=2mA | 0.7 | V | ||
| Output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 3.5 | pF | ||
| Transition frequency | fT | VCE=6V, IC= 20mA f=30MHz | 150 | MHz | ||
| hFE Classification Rank L | 200 | 450 | ||||
| hFE Classification Rank H | 450 | 1000 |
2306301522_JSMSEMI-S9014_C916366.pdf
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