High current capability PNP transistor JSMSEMI SS8550 suitable for power amplification and complementary SS8050
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description
Product Overview
The SS8550 is a PNP transistor designed for power amplification circuits. It offers high current capability and is complementary to the SS8050 transistor, making it suitable for various power amplification applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: SS8550
- Type: PNP
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
| Absolute Maximum Ratings (Ta=25) | VCBO | -40 | V | |
| VCEO | -25 | V | ||
| VEBO | -5 | V | ||
| IC (Continuous) | -1.25-1.5* | A | Note: At Ib=100mA, IC can operate continuously at 1.5A. Max continuous operating current decreases as Ib decreases. | |
| PC | 0.3 | W | ||
| Tj | 150 | |||
| Tstg | -55150 | |||
| Electrical Characteristics (Ta=25) | VBR(CBO) | -40 | V | IC=-100A,IE=0 |
| VBR(CEO) | -25 | V | IC=-100A,IB=0 | |
| VBR(EBO) | -5 | V | IE=-100A,IC=0 | |
| ICBO | -0.1 | A | VCB=-40V,IE=0 | |
| IEBO | -0.1 | A | VEB=-5V,IC=0 | |
| ICEO | -0.1 | A | VCE=-20V,IB=0 | |
| hFE(1) | 120400 | VCE=-1V,IC=-100mA | ||
| hFE(2) | 40 | VCE=-1V,IC=-800mA | ||
| VCE(sat) | -0.5 | V | IC=-800mA,IB=-80mA | |
| VBE(sat) | -1.2 | V | IC=-800mA,IB=-80mA | |
| VBE(ON) | -1 | V | IC=-10mA, VCE=-1V | |
| VBEF | -1.55 | V | IB=-1A | |
| fT | 100 | MHz | VCE=-10V,IC=-50mA,f=30MHz | |
| Cob | 20 | pF | VCB=-10V, IE=0, f=1MHz | |
| hFE Classification | Rank | Range | ||
| L | 120200 | |||
| H | 200350 | |||
| J | 300400 |
2409271333_JSMSEMI-SS8550_C916393.pdf
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