MiniMELF LL34 Case Zener Diodes JSMSEMI ZMM3V0 Silicon Epitaxial Planar Type Designed for Automation
Key Attributes
Model Number:
ZMM3V0
Product Custom Attributes
Impedance(Zzt):
85Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
500mW
Zener Voltage(Range):
2.8V~3.2V
Zener Voltage(Nom):
3V
Impedance(Zzk):
600Ω
Mfr. Part #:
ZMM3V0
Package:
LL-34
Product Description
Product Overview
Silicon Epitaxial Planar Zener Diodes in a MiniMELF case (LL-34) designed for automatic insertion. These diodes are also available in a DO-35 case.
Product Attributes
- Brand: JSM (implied by www.jsmsemi.com)
- Case: LL-34 (MiniMELF), DO-35
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Absolute Maximum Ratings | ||||
| Power Dissipation | Ptot | 500 | mW | 1) Valid provided that electrodes are kept at ambient temperature. |
| Junction Temperature | Tj | 175 | °C | |
| Storage Temperature Range | Tstg | -55 to +175 | °C | |
| Characteristics at Ta = 25 °C | ||||
| Thermal Resistance Junction to Ambient Air | RθJA | 0.3 | K/mW | 1) Valid provided that electrodes are kept at ambient temperature. |
| Forward Voltage at IF = 100 mA | VF | 1 | V | 1) Valid provided that electrodes are kept at ambient temperature. |
2403051505_JSMSEMI-ZMM3V0_C2857243.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
