Low noise PNP transistor JSMSEMI S9015 complementary to S9014 designed for pre amplifier applications
Key Attributes
Model Number:
S9015
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
-
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
S9015
Package:
SOT-23
Product Description
Product Overview
The S9015 is a PNP transistor designed for low-level, low-noise pre-amplifiers. It is complementary to the S9014 transistor and offers good linearity characteristics. The marking for this transistor is M6.
Product Attributes
- Brand: JSMICRO Semiconductor
- Type: PNP Transistor
- Complementary to: S9014
- Marking: M6
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Collector-Base Voltage | VCBO | -50 | V | ||
| Collector-Emitter Voltage | VCEO | -45 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current Continuous | IC | -0.1 | A | ||
| Collector Power Dissipation | PC | 0.2 | W | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | ||
| Collector-Base Breakdown Voltage | VBR(CBO) | IC=-100A,IE=0 | -50 | V | |
| Collector-Emitter Breakdown Voltage | VBR(CEO) | IC=-100A,IB=0 | -45 | V | |
| Emitter-Base Breakdown Voltage | VBR(EBO) | IE=-100A,IC=0 | -5 | V | |
| Collector Cutoff Current | ICBO | VCB=-50V,IE=0 | -0.1 | A | |
| Emitter Cutoff Current | IEBO | VEB=-5V,IC=0 | -0.1 | A | |
| DC Current Gain | hFE | VCE=-5V,IC=-1mA | 200 | 1000 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-100mA,IB=-10mA | -0.3 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-100mA,IB=-10mA | -1 | V | |
| Characteristic Frequency | fT | VCE=-5V,IC=-10mA,f=30MHz | 150 | MHz |
2306301522_JSMSEMI-S9015_C916367.pdf
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