P Channel MOSFET JSMSEMI AOD403 Offering Low Gate Charge and Suitable for Wide Range Applications
Key Attributes
Model Number:
AOD403
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
480pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
4.55nF@15V
Pd - Power Dissipation:
84W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
AOD403
Package:
TO-252
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. Key features include a VDS of -30V, ID of -80A, and RDS(ON) as low as <7.5 m@VGS=-10V. The device boasts low gate charge, is available as a green device, and incorporates advanced high cell density trench technology for ultra-low RDS(ON). Its excellent package design ensures good heat dissipation.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: AOD403
- Type: P-Channel MOSFET
- Technology: Advanced Trench
- Availability: Green device available
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | -80 | A | |||
| Continuous Drain Current (TC=100) | ID | -49 | A | |||
| Pulsed Drain Current | IDM | note1 | -260 | A | ||
| Single Pulsed Avalanche Energy | EAS | note2 | 164 | mJ | ||
| Total Power Dissipation | PD | 84 | W | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | +175 | |||
| Thermal Resistance, Junction to Case | RJC | 1.5 | /W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V,TJ=25 | -1 | A | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0A | 100 | nA | ||
| GATE-Source Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | -1.0 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V,ID=-30A | 5.8 | 7.5 | m | |
| VGS=-4.5V,ID=-20A | 9 | 12.6 | ||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 4550 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | 525 | |||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | 480 | |||
| Turn-On Delay Time | td(on) | VDD=-15V, ID=-30A, VGS=-10V, RG=2.5 | 19 | ns | ||
| Rise Time | tr | VDD=-15V, ID=-30A, VGS=-10V, RG=2.5 | 15 | |||
| Turn-Off Delay Time | td(off) | VDD=-15V, ID=-30A, VGS=-10V, RG=2.5 | 65 | |||
| Fall Time | tf | VDD=-15V, ID=-30A, VGS=-10V, RG=2.5 | 36 | |||
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, ID=-20A | 45 | nC | ||
| Gate-Source Charge | Qgs | VGS=-10V, VDS=-15V, ID=-20A | 8 | |||
| Gate-Drain Miller Charge | Qgd | VGS=-10V, VDS=-15V, ID=-20A | 12 | |||
| Drain Diode Forward Voltage | VSD | VGS=0V,IS=-30A,TJ=25 | -0.8 | -1.2 | V | |
| Continuous Source Current | IS | VG=VD=0V , Force Current | -80 | A | ||
| Pulsed Source Current | ISM | -240 | A |
2305260912_JSMSEMI-AOD403_C6396161.pdf
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