Power MOSFET JSMSEMI IRFR5305-JSM P Channel 60 Volt TrenchFET Technology Load Switching Device
Key Attributes
Model Number:
IRFR5305-JSM
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
26A
Operating Temperature -:
-55℃~+175℃
RDS(on):
23mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
1 P-Channel
Output Capacitance(Coss):
540pF
Pd - Power Dissipation:
60W
Input Capacitance(Ciss):
1.886nF
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
IRFR5305-JSM
Package:
TO-252
Product Description
JSMICRO Semiconductor IRFR5305 P-Channel 60 V (D-S) MOSFET
The JSMICRO IRFR5305 is a P-Channel TrenchFET Power MOSFET designed for load switching applications. Its advanced TrenchFET technology offers improved performance and efficiency. This device is suitable for applications requiring a 60V drain-source voltage and low on-state resistance.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Type: P-Channel MOSFET
- Technology: TrenchFET
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| RDS(on) | VGS = -10 V | 0.02 | ||||
| ID | -50 | A | ||||
| RDS(on) | VGS = -4.5 V | 0.025 | ||||
| ID | -45 | A | ||||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | (TA = 25 C, unless otherwise noted) | -60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TJ = 175 C) | ID | TC = 25 C | -50 | A | ||
| Continuous Drain Current (TJ = 175 C) | ID | TC = 125 C | -40 | A | ||
| Pulsed Drain Current | IDM | -160 | A | |||
| Avalanche Current | IAS | -50 | A | |||
| Single Pulse Avalanche Energy | EAS | L = 0.1 mH | 125 | mJ | ||
| Power Dissipation | PD | TC = 25 C | 113 | W | ||
| Power Dissipation | PD | TA = 25 C | 2.5 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient | RthJA | t 10 s | 15 | 18 | C/W | |
| Junction-to-Ambient | RthJA | Steady State | 40 | 50 | C/W | |
| Junction-to-Case | RthJC | 0.82 | 1.1 | C/W | ||
| SPECIFICATIONS | ||||||
| Static Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = -250 A | -60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 A | -1.5 | -3 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -60 V, VGS = 0 V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -60 V, VGS = 0 V, TJ = 125 C | -50 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -60 V, VGS = 0 V, TJ = 150 C | -100 | A | ||
| On-State Drain Current | ID(on) | VDS = -5 V, VGS = -10 V | -50 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V, ID = -17 A | 0.020 | 0.025 | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V, ID = -40 A, TJ = 125 C | 0.030 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V, ID = -40 A, TJ = 150 C | 0.035 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5 V, ID = -14 A | 0.040 | |||
| Forward Transconductance | gfs | VDS = -15 V, ID = -17 A | 61 | S | ||
| Dynamic | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2950 | pF | ||
| Output Capacitance | Coss | 380 | pF | |||
| Reverse Transfer Capacitance | Crss | 305 | pF | |||
| Total Gate Charge | Qg | VDS = -30 V, VGS = -10 V, ID = -40 A | 110 | 165 | nC | |
| Gate-Source Charge | Qgs | 19 | nC | |||
| Gate-Drain Charge | Qgd | 28 | nC | |||
| Turn-On Delay Time | td(on) | VDD = -30 V, RL = 0.6 , ID -40 A, VGEN = -10 V, RG = 6 | 15 | 23 | ns | |
| Rise Time | tr | 70 | 105 | ns | ||
| Turn-Off Delay Time | td(off) | 175 | 260 | ns | ||
| Fall Time | tf | 175 | 260 | ns | ||
| Source-Drain Diode Ratings and Characteristics | ||||||
| Continuous Current | IS | TC = 25 C | -40 | A | ||
| Pulsed Current | ISM | -80 | A | |||
| Forward Voltage | VSD | IF = -40 A, VGS = 0 V | -1 | -1.6 | V | |
| Reverse Recovery Time | trr | IF = -40 A, dI/dt = 100 A/s | 45 | 70 | ns | |
2204191800_JSMSEMI-IRFR5305-JSM_C2874618.pdf
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