Low on resistance N channel MOSFET JSMSEMI 2N7002K 4V drive voltage suitable switching applications
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-65℃~+150℃
RDS(on):
7.5Ω@10V,0.5A
Gate Threshold Voltage (Vgs(th)):
2.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
14pF
Input Capacitance(Ciss):
33pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is a 4V drive N-channel enhancement mode MOSFET designed for switching applications. It offers low on-resistance, high ESD protection, and high-speed switching capabilities, making drive circuits simple and facilitating parallel use. This device is suitable for general switching applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Part Number: 2N7002K
- Package Type: SOT-23
- Drive Voltage: 4V
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Maximum Ratings @ Ta=25 | VDSS | Drain-Source voltage | 63 | V | ||
| VGSS | Gate -Source voltage | ±20 | V | |||
| ID | Drain current -continuous | ±300 | mA | |||
| ID | Drain current -Pulsed | ±800 | mA | |||
| PD | Power Dissipation | 350 | mW | |||
| Electrical Characteristics @ Ta=25 | IGSS | Gate leakage current (VGS=±20V,VDS=0V) | ±6 | μA | ||
| VSD | Forward voltage (IS=0.3A,VGS=0V) | 1.2 | V | |||
| V(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V,ID=250uA) | 63 | V | |||
| VGS(th) | Gate Threshold Voltage (VDS= VGS , IDS=250uA) | 1.1 | 2.4 | V | ||
| IDSS | Drain cutoff Current (VDS=60V, VGS=0V) | 0.06 | μA | |||
| RDS(on) | Drain-source on-state resistance (ID=0.05A,VGS=5V) | 7.5 | Ω | |||
| RDS(on) | Drain-source on-state resistance (ID=0.5A,VGS=10V) | 7.5 | Ω | |||
| |Yfs| | Forward transfer admittance (VDS=10V,ID=200mA) | 80 | mS | |||
| Capacitance | CISS | Input capacitance (VDS=10V,VGS=0V,f=1.0MHz) | 33 | pF | ||
| COSS | Output capacitance (VDS=10V,VGS=0V,f=1.0MHz) | 14 | pF | |||
| CRSS | Reverse transfer capacitance (VDS=10V,VGS=0V,f=1.0MHz) | 9 | pF | |||
| Switching Times | tD(ON) | Turn-On Delay Time (VDD = 30V, ID= 150mA, RL = 200Ω, VGS= 10V, RGEN= 10Ω) | 6 | ns | ||
| tR | Rise time (VDD = 30V, ID= 150mA, RL = 200Ω, VGS= 10V, RGEN= 10Ω) | 5 | ns | |||
| tD(OFF) | Turn-Off Delay Time (VDD = 30V, ID= 150mA, RL = 200Ω, VGS= 10V, RGEN= 10Ω) | 13 | ns | |||
| tF | Fall time (VDD = 30V, ID= 150mA, RL = 200Ω, VGS= 10V, RGEN= 10Ω) | 80 | ns | |||
| Charge | Qg | Total gate charge (VDD=30V,VGS=10V ID=200mA) | 3 | 6 | nC | |
| Qgs | Gate-source charge (VDD=30V,VGS=10V ID=200mA) | 0.6 | nC | |||
| Qgd | Gate-drain charge (VDD=30V,VGS=10V ID=200mA) | 0.5 | nC |
2401051645_JSMSEMI-2N7002K_C916397.pdf
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