N Channel 100V MOSFET JSMSEMI IRF540NS JSM designed for switching in SMPS and power factor correction
Key Attributes
Model Number:
IRF540NS-JSM
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
88pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.331nF
Pd - Power Dissipation:
110W
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
IRF540NS-JSM
Package:
TO-263
Product Description
Product Overview
The IRF540N/NS is a 100V N-Channel MOSFET designed for high-performance switching applications. It features fast switching speeds, 100% avalanche testing for reliability, and improved dv/dt capability. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Series: IRF540N/NS
- Channel Type: N-Channel
- Voltage Rating: 100V
Technical Specifications
| Parameter | Symbol | Test Conditions | Value (TO-220/TO-263) | Unit |
| Drain-Source Voltage (VGS = 0V) | VDSS | 100 | V | |
| Continuous Drain Current | ID | TC = 25C | 33 | A |
| Pulsed Drain Current (note1) | IDM | 120 | A | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Single Pulse Avalanche Energy (note2) | EAS | 335 | mJ | |
| Single Pulse Avalanche Current (note1) | IAS | 22 | A | |
| Repetitive Avalanche Energy (note1) | EAR | 201 | mJ | |
| Power Dissipation (TC = 25C) | PD | 110 | W | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | C | |
| Thermal Resistance, Junction-to-Case | RthJC | 1.14 | K/W | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 60 | K/W | |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 100 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V, TJ = 25C | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V, TJ = 125C | 100 | A |
| Gate-Source Leakage | IGSS | VGS = 20V | 100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 - 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 15A | 30 - 38 | m |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | 1331 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | 276 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | 88 | pF |
| Total Gate Charge | Qg | VDD = 80V, ID = 30A, VGS = 10V | 53 | nC |
| Gate-Source Charge | Qgs | VDD = 80V, ID = 30A, VGS = 10V | 6 | nC |
| Gate-Drain Charge | Qgd | VDD = 80V, ID = 30A, VGS = 10V | 29 | nC |
| Turn-on Delay Time | td(on) | VDD = 50V, ID =10A, RG = 25 | 39 | ns |
| Turn-on Rise Time | tr | VDD = 50V, ID =10A, RG = 25 | 45 | ns |
| Turn-off Delay Time | td(off) | VDD = 50V, ID =10A, RG = 25 | 207 | ns |
| Turn-off Fall Time | tf | VDD = 50V, ID =10A, RG = 25 | 64 | ns |
| Continuous Body Diode Current | IS | TC = 25 C | 33 | A |
| Pulsed Diode Forward Current | ISM | 120 | A | |
| Body Diode Voltage | VSD | TJ = 25C, ISD = 15A, VGS = 0V | 2 | V |
| Reverse Recovery Time | trr | VGS = 0V, IS = 10A, diF/dt =100A /s | 102 | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V, IS = 10A, diF/dt =100A /s | 0.46 | C |
2307211804_JSMSEMI-IRF540NS-JSM_C7436408.pdf
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