Low gate charge N Channel Power MOSFET JSMSEMI JSM36326 designed for telecom and industrial DC DC converters
Key Attributes
Model Number:
JSM36326
Product Custom Attributes
Drain To Source Voltage:
28V
Current - Continuous Drain(Id):
12A
RDS(on):
9.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
19W
Input Capacitance(Ciss):
688pF@15V
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
JSM36326
Package:
DFN-8(3.3x3.3)
Product Description
Product Overview
The JSM36326 is a N-Channel Enhancement Mode Power MOSFET featuring Trench Power MOS Technology. It offers low RDS(ON), low gate charge, and high current capability, making it suitable for DC/DC converters in computing, and isolated DC/DC converters in telecom and industrial applications. This device is 100% UIS and Rg tested, and is RoHS and Halogen-Free compliant.
Product Attributes
- Brand: JSM Semiconductor
- Certifications: RoHS and Halogen-Free Compliant
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | |||||
| Drain-Source Voltage | 28 | V | |||
| Gate-Source Voltage | ±12 | V | |||
| Continuous Drain Current | TC=25°C | 28 | A | ||
| Pulsed Drain Current | TA=25°C | 100 | A | ||
| Repetitive avalanche energy | L=0.1mH | 75 | mJ | ||
| Avalanche Current | 12 | A | |||
| Maximum Junction-to-Case Thermal Resistance | RθJC Steady-State | 4.5 | 5.4 | °C/W | |
| Maximum Junction-to-Ambient Thermal Resistance | RθJA Steady-State (Note A) | 36 | 75 | °C/W | |
| Power Dissipation | PD Steady-State (Note B) | 30 | W | ||
| Power Dissipation | PDSM Repetitive (Note C, H) | 100 | W | ||
| Junction and Storage Temperature Range | -55 | 150 | °C | ||
| ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | ID=250µA, VGS=0V | 28 | V | ||
| Gate Threshold Voltage | ID=250µA, VDS=0V | 1.3 | 1.6 | 2.5 | V |
| Zero Gate Voltage Drain Current | VDS=28V, VGS=0V | 1 | 10 | µA | |
| Gate-Body leakage current | VGS=±12V, VDS=0V | ±100 | nA | ||
| Static Drain-Source On-Resistance | VGS=10V, ID=12A | 8.5 | 9.9 | mΩ | |
| Static Drain-Source On-Resistance | VGS=4.5V, ID=10A | 10 | 14 | mΩ | |
| Forward Transconductance | VDS=5V, ID=12A | 45 | S | ||
| Diode Forward Voltage | IS=12A, VGS=0V | 0.7 | 1.2 | V | |
| Continuous Drain Current (Body Diode) | IS=12A | 12 | A | ||
| DYNAMIC PARAMETERS | |||||
| Input Capacitance | VGS=0V, VDS=15V, f=1MHz | 688 | pF | ||
| Output Capacitance | VGS=0V, VDS=15V, f=1MHz | 305 | pF | ||
| Reverse Transfer Capacitance | VGS=0V, VDS=15V, f=1MHz | 24 | pF | ||
| Gate Resistance | VGS=0V, VDS=0V, f=1MHz | 0.8 | 1.6 | Ω | |
| Total Gate Charge | VGS=10V, VDS=15V, ID=12A | 12 | nC | ||
| Turn-On DelayTime | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 3.5 | 5.6 | ns | |
| Turn-On Rise Time | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 3 | 8 | ns | |
| Turn-Off DelayTime | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 7 | 15 | ns | |
| Turn-Off Fall Time | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 3 | 9.6 | ns | |
| Body Diode Reverse Recovery Time | IF=12A , dI/dt=500A/µs | 5.5 | ns | ||
| Body Diode Reverse Recovery Charge | IF=12A , dI/dt=500A/µs | 6.4 | nC | ||
2111121930_JSMSEMI-JSM36326_C2874715.pdf
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