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quality p channel mosfet transistor JSMSEMI BSP170P designed for high speed switching and low on resistance factory
quality p channel mosfet transistor JSMSEMI BSP170P designed for high speed switching and low on resistance factory

p channel mosfet transistor JSMSEMI BSP170P designed for high speed switching and low on resistance

Key Attributes
Model Number: BSP170P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
170mΩ@10V,0.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.25V
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 P-Channel
Input Capacitance(Ciss):
160pF@10V
Pd - Power Dissipation:
1W
Mfr. Part #:
BSP170P
Package:
SOT-223
Product Description

Product Overview

The BSP170P is a P-CHANNEL MOSFET designed for high-speed switching applications. It features low on-resistance, low drive current, and can be driven from a 5V source with a 4V gate drive. This device is suitable for switching regulators and DC-DC converters.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Product Name: BSP170P P-CHANNEL MOSFET FOR SWITCHING
  • Package: SOT-223

Technical Specifications

ItemSymbolMinTypMaxUnitTest Conditions
Drain to source breakdown voltageV(BR)DSS60VID = 10 mA, VGS = 0
Gate to source breakdown voltageV(BR)GSS20VIG = 100 A, VDS = 0
Gate to source leak currentIGSS5AVGS = 16 V, VDS = 0
Zero gate voltage drain currentIDSS10AVDS = 50 V, VGS = 0
Gate to source cutoff voltageVGS(off)1.02.25VID = 1 mA, VDS = 10 V
Static drain to source on state resistanceRDS (on)0.150.17ID = 0.5 A, VGS = 10 V Note 3
Static drain to source on state resistanceRDS (on)0.190.2ID = 0.5 A, VGS = 4 V Note 3
Forward transfer admittance|yfs|0.61.0SID = 0.5 A, VDS = 10 V Note 3
Input capacitanceCiss160pFVDS = 10 V, VGS = 0, f = 1 MHz
Output capacitanceCoss80pF
Reverse transfer capacitanceCrss28pF
Turn-on delay timetd (on)7nsID = 0.5 A, VGS = 10 V, RL = 60
Rise timetr8ns
Turn-off delay timetd (off)30ns
Fall timetf25ns
Body to drain diode forward voltageVDF1.1VIF = 1 A, VGS = 0
Body to drain diode reverse recovery timetrr90nsIF = 1 A, VGS = 0, diF/dt = 50 A/s
Channel dissipationPch1W(Ta = 25C) (on the alumina ceramic board)
Channel temperatureTch150C
Storage temperatureTstg55+150C
ItemSymbolValueUnitConditions
Drain currentID3A(Ta = 25C)
Drain peak currentID (pulse)4A(Ta = 25C)
Body to drain diode reverse drain currentIDR1A(Ta = 25C)

2401051657_JSMSEMI-BSP170P_C5296736.pdf

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